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Semiconductor device having poly-poly capacitor

  • US 20040140527A1
  • Filed: 07/15/2003
  • Published: 07/22/2004
  • Est. Priority Date: 01/21/2003
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • an MOS capacitor that comprises, a first-conductivity-type diffusion layer formed in a surface of a substrate, a gate oxide film formed on said first-conductivity-type diffusion layer, and a first polysilicon layer formed on said gate oxide film and doped with a dopant of the first conductivity type or a second conductivity type; and

    a Poly-Poly capacitor that comprises, said first polysilicon layer, a first dielectric layer formed on said first polysilicon layer, and a second polysilicon layer formed on said first dielectric layer and doped with a dopant of the first conductivity type or the second conductivity type, said Poly-Poly capacitor being stacked on said MOS capacitor, and said first-conductivity-type diffusion layer and said second polysilicon layer being electrically connected to a same first metal interconnection.

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