Deposition of tungsten nitride
First Claim
1. A method of forming a tungsten nitride layer on a substrate, the method comprising:
- (a) depositing a gas phase boron-containing agent onto the substrate to form a boron-containing sacrificial layer on the substrate;
(b) exposing the boron-containing sacrificial layer to a tungsten containing precursor to form a tungsten layer;
(c) exposing the tungsten layer to a nitriding agent to form a first portion of the tungsten nitride layer; and
(d) performing one or more additional cycles of tungsten nitride deposition to complete formation of the tungsten nitride layer, wherein the additional cycles each comprise contact with reducing agent, tungsten containing precursor, and nitriding agent.
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Abstract
Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungsten layer is then exposed to a nitriding agent to form a tungsten nitride layer. Methods of forming relatively thick layers of involve repeated cycles of contact with reducing agent, tungsten precursor and nitriding agent. In some cases, the cycle may also include contact with a dopant precursor such as phosphine or arsine.
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Citations
50 Claims
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1. A method of forming a tungsten nitride layer on a substrate, the method comprising:
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(a) depositing a gas phase boron-containing agent onto the substrate to form a boron-containing sacrificial layer on the substrate;
(b) exposing the boron-containing sacrificial layer to a tungsten containing precursor to form a tungsten layer;
(c) exposing the tungsten layer to a nitriding agent to form a first portion of the tungsten nitride layer; and
(d) performing one or more additional cycles of tungsten nitride deposition to complete formation of the tungsten nitride layer, wherein the additional cycles each comprise contact with reducing agent, tungsten containing precursor, and nitriding agent. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A method of forming a tungsten nitride layer on a substrate, the method comprising:
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(a) positioning the substrate in a deposition chamber;
(b) depositing a gas phase reducing agent onto the substrate to form a layer of reducing agent on the substrate;
(c) exposing the layer of reducing agent to a tungsten containing precursor to form a tungsten layer;
(d) exposing the tungsten layer to a nitriding agent to form a first portion of the tungsten nitride layer; and
(e) repeating (b) through (d) for one or more cycles to complete formation of the tungsten nitride layer. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 43, 44, 45, 46)
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41. The method of 40 in which the plasma is an RF plasma containing Ar, N2, H2, NH3, or any combination thereof.
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42. The method of 40 in which the plasma is remote from the reaction chamber and contains Ar, N2, H2, NH3, or any combination thereof.
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47. A method of forming a tungsten nitride layer on a substrate, the method comprising:
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(a) positioning the substrate in a deposition chamber;
(b) depositing a one or more layers of pulsed deposition tungsten on the semiconductor wafer;
(c) depositing one or more layers of pulsed deposition tungsten nitride on the one or more layers of tungsten; and
(d) optionally repeating (b)-(c) to generate either a bilayer of W—
WN or a multi-layered structure of multiple tungsten and tungsten nitride layers. - View Dependent Claims (48, 49, 50)
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Specification