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Deposition of tungsten nitride

  • US 20040142557A1
  • Filed: 10/20/2003
  • Published: 07/22/2004
  • Est. Priority Date: 01/21/2003
  • Status: Active Grant
First Claim
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1. A method of forming a tungsten nitride layer on a substrate, the method comprising:

  • (a) depositing a gas phase boron-containing agent onto the substrate to form a boron-containing sacrificial layer on the substrate;

    (b) exposing the boron-containing sacrificial layer to a tungsten containing precursor to form a tungsten layer;

    (c) exposing the tungsten layer to a nitriding agent to form a first portion of the tungsten nitride layer; and

    (d) performing one or more additional cycles of tungsten nitride deposition to complete formation of the tungsten nitride layer, wherein the additional cycles each comprise contact with reducing agent, tungsten containing precursor, and nitriding agent.

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