Microsystems arrays for digital radiation imaging and signal processing and method for making microsystem arrays

• US 20040144927A1
• Filed: 01/28/2003
• Published: 07/29/2004
• Est. Priority Date: 01/28/2003
• Status: Abandoned Application

• Current Assignee: Feng Zhong, Gregory W. Auner, Peter Littrup
• Original Assignee: Feng Zhong, Gregory W. Auner, Peter Littrup
• Inventors: Zhong, Feng, Auner, Gregory W., Littrup, Peter
• Application Number:
  US10/353,755
• Publication Number:
  US 20040144927A1
• Time in Patent Office: Days
• US Class Current: 250/370.11
• CPC Class Codes: G01T 1/2928 using solid state detectors

Abstract

An imaging system having at least one microsystem array that is made using a wide bandgap semiconductor and configured in a pixel arrangement. The imaging system also including an electronic readout arrangement integrated with the at least one microsystem array.

Claims

1. An imaging system comprising:

at least one microsystem array, the at least one microsystem array composed of a wide bandgap semiconductor and being in a pixel arrangement; and

an electronic readout arrangement integrated with the at least one microsystem array.

2. The imaging system of claim 1, wherein the wide bandgap semiconductor includes one of a metal and an electrically conductive material.

3. The imaging system of claim 1, wherein the wide bandgap semiconductor includes aluminum nitride.

4. The imaging system of claim 1, wherein the wide bandgap semiconductor includes silicon carbide.

5. The imaging system of claim 1, wherein the at least one microsystem array includes a high density pixel arrangement.

6. The imaging system of claim 5, wherein the at least one microsystem array has at least 2500 pixels per square centimeter.

7. The imaging system of claim 1, further comprising a scintillating layer associated with the at least one microsystem array.

8. The imaging system of claim 7, wherein the scintillating layer is composed of quartz crystals.

9. The imaging system of claim 7, wherein the scintillating layer is composed of cadmium/zinc/telluride (CZT) crystals.

10. The imaging system of claim 1, further comprising a processor arrangement coupled to the electronic readout arrangement.

11. The imaging system of claim 1, wherein the at least one microsystem array is arranged as a module.

12. The imaging system of claim 1, wherein the at least one microsystem array is micro-machined by an Excimer laser.

13. The imaging system of claim 1, wherein the wide bandgap semiconductor is formed by plasma source molecular beam epitaxy.

14. A deposition system for forming a wide bandgap semiconductor, the deposition system comprising:

a plasma source molecular beam epitaxy (PSMBE) deposition source;

a high vacuum chamber; and

a rotating substrate holder enclosed in the high vacuum chamber;

wherein the plasma source molecular beam epitaxy (PSMBE) deposition source is configured to induce crystal growth to form the wide bandgap semiconductor on a substrate positioned on the rotating substrate holder.

15. The deposition system of claim 14, wherein the substrate holder is heated to between 650°

C. and 800°

C.

16. The deposition system of claim 14, wherein the deposition source includes a magnetically enhanced hollow cathode to induce plasma formation.

17. The deposition system of claim 14, wherein the crystal growth includes polycrystalline crystals.

18. The deposition system of claim 14, wherein the crystal growth includes single crystals.

19. The deposition system of claim 14, wherein the crystal growth includes hexagonal structures.

20. The deposition system of claim 14, wherein the crystal growth includes an initial compliant layer formed at a low temperature.

21. The deposition system of claim 14, wherein the substrate is sapphire.

22. The deposition system of claim 14, wherein the wide bandgap semiconductor is composed of aluminum nitride (AlN).

23. A microsystem array smart sensor, comprising:

a microsystem array sensor arrangement to emit a signal;

an amplifier arrangement to amplify an emitted signal;

a hardware processing arrangement to process an amplified signal;

a data converter to convert a processed signal to provide a converted signal in preparation for transmission; and

a data bus to transmit the converted signal;

wherein the microsystem array sensor arrangement is made using a wide bandgap semiconductor.

24. The microsystem array smart sensor of claim 23, wherein the wide bandgap semiconductor includes aluminum nitride.

25. The microsystem array smart sensor of claim 23, further comprising a data communication arrangement interfaced with the data bus.

26. The microsystem array smart sensor of claim 25, further comprising a software process arrangement interfaced with the data communication arrangement.

27. The microsystem array smart sensor of claim 23, wherein signals of the microsystem array sensor arrangement are communicated to a centralized processor arrangement.

28. A microsystem array smart sensor system, comprising:

a plurality of microsystem array sensor arrangements made using a wide bandgap semiconductor; and

at least one combining node, wherein the plurality of microsystem array sensor arrangements and the at least one combining node are arranged in a hierarchical structure.

29. The microsystem array smart sensor system, wherein the wide bandgap semiconductor includes aluminum nitride.