Light emitting diode, support & method of manufacture

• US 20040144976A1
• Filed: 03/03/2004
• Published: 07/29/2004
• Est. Priority Date: 09/03/2002
• Status: Abandoned Application

• Current Assignee: Brahim Dahmani, Guillaume Guzman
• Original Assignee: Brahim Dahmani, Guillaume Guzman
• Inventors: Guzman, Guillaume, Dahmani, Brahim
• Application Number:
  US10/654,461
• Publication Number:
  US 20040144976A1
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 50/17 Carrier injection layers
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 50/813 characterised by their shape
• CPC Class Codes: H10K 50/816 Multilayers, e.g. transparent multilayers
• CPC Class Codes: H10K 50/85 Arrangements for extracting light from the devices

Abstract

A light emitting diode of the stacked-layer structure type, incorporating at least one layer made of an inorganic material between the layer forming the substrate and a layer forming the light emitting layer, is provided, in which a periodic structure at the wavelength range emitted by the light emitting layer is printed.

Also described is a method for generating a microstructure periodic with a wavelength range of the emitting layer of a light emitting diode. The method includes: depositing an inorganic material layer by a sol-gel process between the substrate and a light emitting layer, and printing the periodic structure onto the outer surface of this layer by soft lithography, as well as using this process for manufacturing a light emitting diode.

Claims

1. A light emitting diode of the stacked layer structure type including:

at least one layer forming the substrate,

at least one layer forming the anode,

at least one hole injection layer,

at least one hole transport layer,

at least one layer forming the light emitting layer,

at least one electron transport layer,

at least one layer forming the cathode,

characterized in that it includes;

at least one layer made of an inorganic material, deposited between the at least one layer forming the substrate and the at least one layer forming the light emitting layer, and in that

said at least one layer made of an inorganic material has printed on its surface a structure periodic at the wavelength range emitted by said at least one light emitting layer.

2. The diode according to claim 1, wherein said at least one layer is made of an inorganic material is a SiO₂ layer deposited between the at least one layer forming the substrate and the at least one layer forming the anode.

3. The diode according to claim 1, wherein said at least one layer made of an organic material is one of the layers forming the anode.

4. The diode according to claim 1, wherein said at least one layer made of an inorganic material is one of the layers forming the hole injection layer.

5. The diode according to claim 3, wherein said at least one layer forming the anode is a layer consisting of a mixed indium tin oxide (ITO).

6. The diode according to claim 3, wherein said at least one layer forming the anode is a layer made of a mixed antimony tin oxide (ATO).

7. The diode according to claim 4, wherein said at least one layer forming the hole injection layer is a layer made of a mixed antimony tin oxide (ATO).

8. A support for manufacturing a diode according to claim 1, wherein said support consists of the following stacked layers:

at least one layer forming a substrate,

an SiO₂ layer whose surface is printed with a periodic structure in a desired wavelength range, and

at least one layer forming an anode.

9. A support for manufacturing a diode according to claim 3, characterized in that said support consists of the following stacked layers:

at least one layer forming a substrate,

at least one layer forming an anode made of an inorganic material and whose surface is printed with a structure periodic at a desired wavelength range.

10. A support for manufacturing a diode according to claim 4, characterized in that said support consists of the following stacked layers:

at least one layer forming a substrate,

at least one layer forming an anode,

at least one layer forming the hole injection layer consisting of an inorganic material and whose surface is printed with a structure periodic at a desired wavelength range.

14. The process according to claim 7, wherein said at least one layer made of an inorganic material is the layer forming the anode consisting of a mixed indium tin oxide (ITO).

20. The process for the manufacture of a light emitting diode characterized in that it includes a step where a support according to any one of claims 8, 9, or 10 is used.

21. A light-emitting diode display screen characterized in that said screen includes at least one light emitting diode according to claim 1.

22. A light-emitting diode display screen characterized in that said screen includes at least one light emitting diode incorporating the support according to any one of claims 8, 9, or 10.

11. A process for generating a microstructure periodic at a wavelength range of an emitting layer of a light emitting diode, said light emitting diode consisting of the following stacked layers:

at least one layer forming a substrate,

at least one layer forming an anode,

at least one hole injection layer,

at least one hole transport layer,

at least one layer forming the light emitting layer,

at least one electron transport layer,

at least one layer forming the cathode,

characterized in that the process includes the following steps;

a) depositing at least one layer made of an inorganic material by a sol-gel process between said at least one layer forming the substrate and said at least one layer forming the light emitting layer, and

b) printing by soft lithography a structure periodic at the wavelength range of the light emitted by said at least one layer forming the light emitting layer onto the surface of said at least one layer deposited in step a).

12. The process according to claim 11, wherein said at least one layer made of an inorganic material is a SiO₂ layer deposited directly onto said at least one layer forming the substrate.

13. The process according to claim 11, wherein said at least one layer made of an inorganic material is the layer forming the anode.

15. The process according to claim 13, wherein said at least one layer made of an inorganic material is one of the layers forming the anode and is a layer (18) made of a mixed antimony tin oxide (ATO).

16. The process according to claim 11, wherein said at least one layer made of an inorganic material is one of the layers forming the hole injection layer.

17. The process according to claim 16, wherein said one of the layers forming the hole injection layer is a layer consisting of a mixed antimony tin oxide (ATO).

18. The process according to any one of claim 11, wherein said at least one layer made of an inorganic material is printed before consolidation by heating.

19. The process for the manufacture of a light emitting diode characterized in that it includes generating a microstructure periodic at the wavelength range of light emitted by the emitting layer of a light emitting diode by a process according to claim 11.