Semiconductor device and method of manufacturing the same

• US 20040144983A1
• Filed: 01/16/2004
• Published: 07/29/2004
• Est. Priority Date: 09/06/2000
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Isobe, Atsuo, Takayama, Toru, Arao, Tatsuya
• Granted Patent: US 6,963,084 B2
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/66742 Thin film unipolar transistors
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

In a semiconductor device having a substrate which has a metal surface, an insulating film which is formed on the substrate having the metal surface, and a pixel unit which is formed on the insulating film; the pixel unit includes a TFT, and wiring lines connected with the TFT, and a storage capacitor is constituted by the substrate (11) having the metal surface, the insulating film (12), and the wiring line (21). As the insulating film is thinner, and as the area of a region where the insulating film and the wiring line lie in contact is larger, the storage capacitor is endowed with a larger capacity.

Claims

1. A semiconductor device comprising:

a substrate having a metal surface;

an insulating film formed on said substrate having said metal surface;

a pixel unit formed over said insulating film, said pixel unit comprising a thin film transistor and a wiring connected to said thin film transistor; and

a storage capacitor constituted by said substrate having said metal surface, said insulating film, and said wiring.

2. A semiconductor device according to claim 1, wherein said metal surface of said substrate has a roughness of 1 μ

mR_MAX or less.

3. A semiconductor device according to claim 1, wherein a radius of curvature of a convex part existing in said metal surface of said substrate is 1 μ

m or more.

4. A semiconductor device according to claim 1, wherein said substrate comprises a stainless substrate.

5. A semiconductor device according to claim 1, wherein said semiconductor device is a liquid crystal display device.

6. A semiconductor device according to claim 1, wherein said semiconductor device is a light emitting device.

7. A semiconductor device according to claim 1, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a digital camera, a goggle type display, a personal computer, a DVD player, an electronic book, and a portable information terminal.

8. A semiconductor device comprising:

a substrate having a metal surface;

an insulating film formed on said substrate having said metal surface;

a pixel unit formed over said insulating film, said pixel unit comprising a thin film transistor, a wiring connected to said thin film transistor, and a pixel electrode connected to said wiring; and

a storage capacitor constituted by said substrate having said metal surface, said insulating film, and said wiring.

9. A semiconductor device according to claim 8, wherein said metal surface of said substrate has a roughness of 1 μ

mR_MAX or less.

10. A semiconductor device according to claim 8, wherein a radius of curvature of a convex part existing in said metal surface of said substrate is 1 μ

m or more.

11. A semiconductor device according to claim 8, wherein said substrate comprises a stainless substrate.

12. A semiconductor device according to claim 8, wherein said semiconductor device is a liquid crystal display device.

13. A semiconductor device according to claim 8, wherein said semiconductor device is a light emitting device.

14. A semiconductor device according to claim 8;

wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a digital camera, a goggle type display, a personal computer, a DVD player, an electronic book, and a portable information terminal.

15. A semiconductor device comprising:

a substrate having a metal surface;

a first insulating film formed on said substrate having said metal surface;

a pixel unit formed over said first insulating film, said pixel unit comprising a thin film transistor, a wiring connected to said thin film transistor, and a pixel electrode connected to said wiring, wherein said pixel electrode is formed on a second insulating film which covers said thin film transistor and a portion of said wiring; and

a storage capacitor constituted by said substrate having said metal surface, said insulating film, and said wiring.

16. A semiconductor device according to claim 15, wherein a surface of said metal substrate has a roughness of 1 μ

mR_MAX or less.

17. A semiconductor device according to claim 15, wherein a radius of curvature of a convex part existing in a surface of said metal substrate is 1 !μ

m or more.

18. A semiconductor device according to claim 15, wherein said substrate comprises a stainless substrate.

19. A semiconductor device according to claim 15, wherein said semiconductor device is a liquid crystal display device.

20. A semiconductor device according to claim 15, wherein said semiconductor device is a light emitting device.

21. A semiconductor device according to claim 15, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a digital camera, a goggle type display, a personal computer, a DVD player, an electronic book, and a portable information terminal.

22. A semiconductor device comprising:

a metal substrate;

an insulating film formed on said metal substrate;

a pixel unit formed over said insulating film, said pixel unit comprising a thin film transistor, a wiring connected to said thin film transistor, and a pixel electrode connected to said wiring; and

a storage capacitor constituted by said metal substrate, said insulating film, and said wiring.

23. A semiconductor device according to claim 22, wherein said metal surface of said substrate has a roughness of 1 μ

mR_MAX or less.

24. A semiconductor device according to claim 22, wherein a radius of curvature of a convex part existing in said metal surface of said substrate is 1 μ

m or more.

25. A semiconductor device according to claim 22, wherein said substrate comprises a stainless substrate.

26. A semiconductor device according to claim 22, wherein said semiconductor device is a liquid crystal display device.

27. A semiconductor device according to claim 22, wherein said semiconductor device is a light emitting device.

28. A semiconductor device according to claim 22, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a digital camera, a goggle type display, a personal computer, a DVD player, an electronic book, and a portable information terminal.

29. A method of manufacturing a semiconductor device comprising the steps of:

forming a first insulating film on a substrate having a metal surface;

forming a semiconductor layer on said first insulating film;

forming a second insulating film on said semiconductor layer;

forming a gate electrode on said second insulating film;

forming a third insulating film so as to cover said semiconductor layer and said gate electrode;

partly removing said third insulating film, thereby to expose a portion of said semiconductor layer and a portion of said first insulating film; and

forming a wiring line electrically connected to said semiconductor layer, and in contact with said portion of said first insulating film.

30. A method according to claim 29, wherein said metal surface of said substrate having said metal surface has a roughness of at most 1 μ

mR_MAX.

31. A method according to claim 29, wherein a radius of curvature of a convex part which exists in said metal surface of said substrate having said metal surface is at least 1 μ

m.

32. A semiconductor device according to claim 29, wherein said substrate comprises a stainless substrate.

33. A semiconductor device according to claim 29, wherein said semiconductor device is a liquid crystal display device.

34. A semiconductor device according to claim 29, wherein said semiconductor device is a light emitting device.

35. A method according to claim 29, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a digital camera, a goggle type display, a personal computer, a DVD player, an electronic book, and a portable information terminal.

36. A method of manufacturing a semiconductor device comprising the steps of:

forming a first insulating film on a substrate having a metal surface;

forming a semiconductor layer on said first insulating film;

forming a second insulating film on said semiconductor layer;

forming a gate electrode on said second insulating film;

forming a third insulating film on said second insulating film and said gate electrode;

partly removing said third insulating film and said second insulating film, thereby to expose a portion of said semiconductor layer and a portion of said first insulating film; and

forming a wiring line electrically connected to said semiconductor layer, and in contact with said portion of said first insulating film.

37. A method according to claim 36, wherein said metal surface of said substrate having said metal surface has a roughness of at most 1 μ

mR_MAX.

38. A method according to claim 36, wherein a radius of curvature of a convex part which exists in said metal surface of said substrate having said metal surface is at least 1 μ

m.

39. A semiconductor device according to claim 36, wherein said substrate comprises a stainless substrate.

40. A semiconductor device according to claim 36, wherein said semiconductor device is a liquid crystal display device.

41. A semiconductor device according to claim 36, wherein said semiconductor device is a light emitting device.

42. A method according to claim 36, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a digital camera, a gaggle type display, a personal computer, a DVD player, an electronic book, and a portable information terminal.

43. A method of manufacturing a semiconductor device comprising the steps of:

forming a first insulating film on a substrate having a metal surface;

forming a semiconductor layer on said first insulating film;

forming a second insulating film on said semiconductor layer;

forming a gate electrode on said second insulating film;

forming a third insulating film so as to cover said semiconductor layer and said gate electrode;

partly removing said third insulating film, thereby to expose a portion of said semiconductor layer and a portion of said first insulating film;

forming a first wiring line electrically connected to said semiconductor layer, and in contact with said portion of said first insulating film;

forming a fourth insulating film so as to cover said first wiring line;

partly removing said fourth insulating film, thereby to expose a portion of said first wiring line; and

forming a second wiring line electrically connected with said first wiring line.

44. A method according to claim 43, wherein said metal surface of said substrate having said metal surface has a roughness of at most 1 μ

mR_MAX.

45. A method according to claim 43, wherein a radius of curvature of a convex part which exists in said metal surface of said substrate having said metal surface is at least 1 μ

m.

46. A semiconductor device according to claim 43, wherein said substrate comprises a stainless substrate.

47. A semiconductor device according to claim 43, wherein said semiconductor device is a liquid crystal display device.

48. A semiconductor device according to claim 43, wherein said semiconductor device is a light emitting device.

49. A method according to claim 43, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a digital camera, a goggle type display, a personal computer, a DVD player, an electronic book, and a portable information terminal.

50. A method of manufacturing a semiconductor device comprising the steps of:

forming a first insulating film on a substrate having a metal surface;

forming a semiconductor layer on said first insulating film;

forming a second insulating film on said semiconductor layer;

forming a gate electrode on said second insulating film;

forming a third insulating film on said second insulating film and said gate electrode;

partly removing said third insulating film and said second insulating film, thereby to expose a portion of said semiconductor layer and a portion of said first insulating film;

forming a first wiring line electrically connected to said semiconductor layer, and in contact with said portion of said first insulating film;

forming a fourth insulating film so as to cover said first wiring line;

partly removing said fourth insulating film, thereby to expose a portion of said first wiring line; and

forming a second wiring line electrically connected with said first wiring line.

51. A method according to claim 50, wherein said metal surface of said substrate having said metal surface has a roughness of at most 1 μ

mR_MAX.

52. A method according to claim 50, wherein a radius of curvature of a convex part which exists in said metal surface of said substrate having said metal surface is at least 1 μ

m.

53. A semiconductor device according to claim 50, wherein said substrate comprises a stainless substrate.

54. A semiconductor device according to claim 50, wherein said semiconductor device is a liquid crystal display device.

55. A semiconductor device according to claim 50, wherein said semiconductor device is a light emitting device.

56. A method according to claim 50, wherein said semiconductor device is one selected from the group consisting of a portable telephone, a video camera, a digital camera, a goggle type display, a personal computer, a DVD player, an electronic book, and a portable information terminal.