Tunnel magnetoresistive element
First Claim
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1. A tunnel magnetoresistive element comprising:
- (a) an underlayer;
(b) an ultrathin ferromagnetic layer disposed on the underlayer;
(c) an insulating layer disposed on the ultrathin ferromagnetic layer; and
(d) a ferromagnetic electrode disposed on the insulating layer.
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Abstract
By varying only the thickness of a known material having superior magnetic characteristics to increase spin polarization without changing the chemical composition, a tunnel magnetoresistive element capable of producing a larger magnetoresistive effect is provided.
The tunnel magnetoresistive element includes an underlayer (nonmagnetic or antiferromagnetic metal film) (1); an ultrathin ferromagnetic layer (2) disposed on the underlayer (1); an insulating layer (3) disposed on the ultrathin ferromagnetic layer (2); and a ferromagnetic electrode (4) disposed on the insulating layer (3).
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Citations
21 Claims
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1. A tunnel magnetoresistive element comprising:
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(a) an underlayer;
(b) an ultrathin ferromagnetic layer disposed on the underlayer;
(c) an insulating layer disposed on the ultrathin ferromagnetic layer; and
(d) a ferromagnetic electrode disposed on the insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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- 9. A tunnel magnetoresistive element having a structure in which a nonmagnetic single-crystal metal or nonmagnetic highly-oriented-polycrystalline interlayer lies between a barrier layer and a ferromagnetic electrode.
- 15. A tunnel magnetoresistive element having a double underlayer including an amorphous MgO layer and a (001)-highly-oriented MgO layer.
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