Circuit component built-in module with embedded semiconductor chip and method of manufacturing

• US 20040145044A1
• Filed: 01/07/2004
• Published: 07/29/2004
• Est. Priority Date: 01/23/2002
• Status: Active Grant

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Yuhaku, Satoru, Ohtani, Kazuo, Komatsu, Shingo, Nakatani, Seiichi, Asahi, Toshiyuki, Sugaya, Yasuhiro, Yamamoto, Yoshiyuki
• Granted Patent: US 7,018,866 B2
• Time in Patent Office: Days
• US Class Current: 257/698
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/13111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/81001 involving a temporary auxiliary member not forming part of the bonding apparatus
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/83101 as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 2224/83856 Pre-cured adhesive, i.e. B-stage adhesive
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06524 : Electrical connections formed on device or on substrate, e.g. a deposited or grown layer
• CPC Class Codes: H01L 2225/06541 : Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 2225/06582 : Housing for the assembly, e.g. chip scale package [CSP]
• CPC Class Codes: H01L 2225/06589 : Thermal management, e.g. cooling
• CPC Class Codes: H01L 2225/06596 : Structural arrangements for testing testing or measuring during manufacture or treatment H01L22/00; testing electrical properties or locating electrical faults G01R31/00
• CPC Class Codes: H01L 2225/1035 : the device being entirely enclosed by the support, e.g. high-density interconnect [HDI]
• CPC Class Codes: H01L 2225/1058 : Bump or bump-like electrical connections, e.g. balls, pillars, posts
• CPC Class Codes: H01L 2225/107 : Indirect electrical connections, e.g. via an interposer, a flexible substrate, using TAB printed circuits H05K1/00
• CPC Class Codes: H01L 23/49822 : Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/49833 : the chip support structure consisting of a plurality of insulating substrates
• CPC Class Codes: H01L 23/5385 : Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 23/5389 : the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/105 : the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01019 : Potassium [K]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/0133 : Ternary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/1627 : stacked type assemblies, e.g. stacked multi-cavities
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H05K 1/187 : the patterned circuits being prefabricated circuits, which are not yet attached to a permanent insulating substrate, e.g. on a temporary carrier

Abstract

A circuit component built-in module includes: a first electrical insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin; a plurality of wiring patterns formed at least on a principal surface of the first electrical insulating substrate; a semiconductor chip incorporated in the first electrical insulating substrate and connected electrically with the wiring patterns; and inner vias electrically connecting the plurality of wiring patterns with one another, the inner vias passing through the first electrical insulating substrate. In the circuit component built-in module, the semiconductor chip has a thickness of not less than 30 μm and not more than 100 μm, and has a non-wired surface ground, and the circuit component built-in module has a thickness in a range of not less than 80 μm and not more than 200 μm. With this configuration, the high-performance and compact-size circuit component built-in module in which circuit components are mounted at a high density is provided so as to be used suitably in various types of electronic information devices.

Claims

1. A circuit component built-in module comprising:

a first electrical insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin;

a plurality of wiring patterns formed at least on a principal surface of the first electrical insulating substrate;

a semiconductor chip incorporated in the first electrical insulating substrate and connected electrically with the wiring patterns; and

inner vias electrically connecting the plurality of wiring patterns with one another, the inner vias passing through the first electrical insulating substrate,

wherein the semiconductor chip has a thickness of not less than 30 μ

m and not more than 100 μ

m, and has a non-wired surface ground, and

the circuit component built-in module has a thickness in a range of not less than 80 μ

m and not more than 200 μ

m.

2. The circuit component built-in module according to claim 1, wherein the semiconductor chips is a wafer-level chip-scale package semiconductor.

3. The circuit component built-in module according to claim 1, wherein two of the semiconductor chips are embedded in a state in which they are arranged in a thickness direction and upper surfaces thereof face each other.

4. The circuit component built-in module according to claim 1, wherein

some of the wiring patterns are formed on the other principal surface of the first electrical insulating substrate,

two of the semiconductor chips are incorporated in the first electrical insulating substrate, in a state in which the semiconductor chips are arranged in a thickness direction of the first electrical insulating substrate and upper surfaces thereof face each other, and

one of the two semiconductor chips is connected electrically with the wiring patterns formed on one of the principal surface of the first electrical insulating substrate, and the other semiconductor chip is connected electrically with the wiring patterns formed on the other surface of the first electrical insulating substrate.

5. The circuit component built-in module according to claim 1, wherein the wiring patterns formed at least on the principal surface of the first electrical insulating substrate constitute a part of wiring patterns on a top layer of a multilayer wiring substrate laminated on the first electrical insulating substrate.

6. The circuit component built-in module according to claim 1, further comprising a passive component incorporated in the first electrical insulating substrate, wherein the passive component is connected electrically with any one of the plurality of wiring patterns.

7. The circuit component built-in module according to claim 6, wherein the passive component is at least one selected from an inductor, a capacitor, and a resistor.

8. The circuit component built-in module according to claim 1, wherein connected portions where the semiconductor chip and the wiring pattern are connected are reinforced by an underfill resin, a non-conductive film, or an anisotropic conductive film containing conductive particles.

9. The circuit component built-in module according to claim 1, being in a multilayer module form including four to eight of the circuit component built-in modules according to claim 1 that are stacked, wherein adjacent ones of the circuit component built-in modules are connected electrically with each other through the inner vias.

10. The circuit component built-in module according to claim 9, wherein second electrical insulating substrates having inner vias are arranged between adjacent ones of the circuit component built-in modules, the second electrical insulating substrates being made of the same composition as that of the first electrical insulating substrate.

11. The circuit component built-in module according to claim 1, being in a multilayer module form including four to eight of the circuit component built-in modules according to claim 1 that are stacked, wherein,

second electrical insulating substrates having inner vias are arranged between adjacent ones of the circuit component built-in modules and

film-form passive elements are arranged on the second electrical insulating substrates.

12. The circuit component built-in module according to claim 1, wherein the circuit component built-in module has a thickness of 100 μ

m to 150 μ

m.

13. A circuit component built-in module manufacturing method, the circuit component-built in module including:

a first electrical insulating substrate made of a mixture containing an inorganic filler and a thermosetting resin;

a plurality of wiring patterns formed at least on a principal surface of the first electrical insulating substrate;

a semiconductor chip incorporated in the first electrical insulating substrate and connected electrically with the wiring patterns; and

inner vias formed to pass through the first electrical insulating substrate so as to electrically connect the plurality of wiring patterns with one another,

the method comprising;

(a) preparing a plate-like member by forming through holes in the first electrical insulating substrate and filling the through holes with a thermosetting conductive material;

(b) mounting a semiconductor chip on wiring patterns formed on a release carrier;

(c) grinding a non-wiring surface of the semiconductor chip so as to reduce a thickness of the semiconductor chip to not less than 30 μ

m to not more than 100 μ

m;

(d) aligning and laminating the plate-like member on a surface of the release carrier where the wiring patterns are formed so that the wiring patterns fall on the through holes filled with the conductive material, and applying pressure thereto so that the semiconductor chip is embedded in the plate-like member, thereby obtaining a semiconductor-chip-embedded product;

(e) heating the semiconductor-chip-embedded product so that the mixture and the conductive material are cured simultaneously, to obtain the circuit component built-in module with a thickness of not less than 80 μ

m and not more than 200 μ

m; and

(f) removing the release carrier.

14. The circuit component built-in module manufacturing method according to claim 13, wherein, in (d), two of the release carriers on each of which the wiring patterns are formed and the semiconductor chips is mounted are utilized, and the plate-like member and the two release carriers are aligned, laminated, and subjected to pressure, with the plate-like member being interposed between the release carriers, so that the two semiconductor chips are embedded in the plate-like member in a state in which the semiconductor chips are arranged in a thickness direction and upper surfaces of the semiconductor chips face each other.

15. The circuit component built-in module manufacturing method according to claim 13, wherein

some of the wiring patterns are formed on the other principal surface of the first electrical insulating substrate,

two of the semiconductor chips are incorporated in the first electrical insulating substrate, in a state in which the semiconductor chips are arranged in a thickness direction of the first electrical insulating substrate and upper surfaces thereof face each other, and

one of the two semiconductor chips is connected electrically with the wiring patterns formed on one of the principal surface of the first electrical insulating substrate, and the other semiconductor chip is connected electrically with the wiring patterns formed on the other surface of the first electrical insulating substrate.

16. The circuit component built-in module manufacturing method according to claim 13, wherein the wiring patterns formed at least on the principal surface of the first electrical insulating substrate constitute a part of wiring patterns on a top layer of a multilayer wiring substrate laminated on the first electrical insulating substrate.

17. The circuit component built-in modulate manufacturing method according to claim 13, wherein the electrical insulating substrate further incorporates a passive component, and the passive component is connected electrically with any one of the plurality of wiring patterns.

18. The circuit component built-in module manufacturing method according to claim 17, wherein the passive component is at least one selected from an inductor, a capacitor, and a resistor.

19. The circuit component built-in module manufacturing method according to claim 13, wherein connected portions where the semiconductor chip and the wiring pattern are connected are reinforced by an underfill resin, a non-conductive film, or an anisotropic conductive film containing conductive particles.

20. The circuit component built-in modules manufacturing method according to claim 13, further comprising (g) stacking four to eight of the circuit component built-in modules obtained through (a) to (f) so as to be in a multilayer module form, wherein adjacent ones of the circuit component built-in modules are connected electrically with each other through the inner vias.

21. The circuit component built-in module manufacturing method according to claim 20, further comprising (h) arranging second electrical insulating substrates between adjacent ones of the circuit component built-in modules, the second electrical insulating substrates being made of the same composition as that of the first electrical insulating substrate.

22. The circuit component built-in module manufacturing method according to claim 13, further comprising (i) stacking four to eight of the circuit component built-in modules obtained through (a) to (f) so as to be in a multilayer module form, wherein the stacking (i) includes:

arranging second electrical insulating substrates between adjacent ones of the circuit component built-in modules; and

arranging film-form passive elements on the second electrical insulating substrates.

23. The circuit component built-in module manufacturing method according to claim 13, wherein the circuit component built-in module has a thickness of 100 μ

m to 150 μ

m.

24. The circuit component built-in module manufacturing method according to claim 23, wherein the release carrier is a metal sheet or a resin sheet.

25. The circuit component built-in module manufacturing method according to claim 24, wherein the resin sheet is a resin film made of at least one selected from polyimide, polyethylene terephthalate, polyethylene naphthalate, polyphenylene sulfite, polyethylene, polypropylene, and fluorine resins.

26. The circuit component built-in module manufacturing method according to claim 24, wherein the metal sheet is a copper foil.

27. The circuit component built-in module manufacturing method according to claim 13, wherein

the release carrier is made of a copper foil,

the wiring patterns are made of copper foils, and

a detachment layer provided between the release carrier and the wiring patterns is made of a chrome-plated layer.