Method for manufacturing resist pattern and method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a resist pattern, comprising the step of forming the resist pattern by discharging a composition containing a photosensitizer on an object to be processed under reduced pressure.
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Abstract
To provide a method for manufacturing a resist pattern designed to reduce a manufacturing cost by improving efficiency in the use of a resist material, a method for removing a resist pattern, and a method for manufacturing a semiconductor device.
The present invention includes a step of forming a resist pattern by discharging a composition containing photosensitizer on a object to be processed under reduced pressure. The present invention includes a step of etching the object to be processed using the resist pattern as a mask, a step of irradiating the resist pattern through a photomask with light within a photosensitive wavelength region of a photosensitizer, and a step of removing the resist pattern on the object to be processed.
65 Citations
18 Claims
- 1. A method for manufacturing a resist pattern, comprising the step of forming the resist pattern by discharging a composition containing a photosensitizer on an object to be processed under reduced pressure.
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4. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a resist pattern by discharging a composition containing a photosensitizer on an object to be processed under reduced pressure; and
etching the object to be processed by using the resist pattern as a mask. - View Dependent Claims (5, 6)
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7. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a resist pattern by discharging a composition containing a photosensitizer on an object to be processed under reduced pressure;
irradiating the resist pattern through a photomask with light within a photosensitive wavelength region of the photosensitizer;
etching the object to be processed by using the resist pattern as a mask; and
removing the resist pattern on the object to be processed. - View Dependent Claims (8, 9)
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10. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a conductive layer by discharging a composition containing a conductive material;
forming a resist pattern by discharging the composition containing a photosensitizer on the conductive layer under reduced pressure;
irradiating the resist pattern through a photomask with light within a photosensitive wavelength region of the photosensitizer;
etching the conductive layer by using the resist pattern as a mask; and
removing the resist pattern on the conductive layer. - View Dependent Claims (11, 12)
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13. A method of manufacturing a semiconductor device comprising:
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forming a resist pattern by discharging a composition containing a photosensitizer on a first conductive layer under reduced pressure;
irradiating the resist pattern through a photomask with light within a photosensitive wavelength region of the photosensitizer;
etching the first conductive layer by using the resist pattern as a mask to form a plurality of gate wirings and a plurality of gate electrodes over a substrate;
removing the resist pattern on the first conductive layer;
forming an insulating film over the plurality of gate wirings;
forming a plurality of semiconductor islands over the gate electrodes with said insulating film interposed therebeween;
forming a resist pattern by discharging a composition containing a photosensitizer on a second conductive layer under reduced pressure;
irradiating the resist pattern through a photomask with light within a photosensitive wavelength region of the photosensitizer;
etching the second conductive layer by using the resist pattern as a mask to form a plurality of pixel electrodes arranged in a matrix form over the substrate;
removing the resist pattern on the second conductive layer;
forming a resist pattern by discharging a composition containing a photosensitizer on a third conductive layer under reduced pressure;
irradiating the resist pattern through a photomask with light within a photosensitive wavelength region of the photosensitizer;
etching the third conductive layer by using the resist pattern as a mask to form a plurality of source wirings wherein said plurality of source wirings extend across said plurality of gate wirings; and
removing the resist pattern on the third conductive layer. - View Dependent Claims (14, 15)
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16. A method of manufacturing a semiconductor device comprising:
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forming a resist pattern by discharging a composition containing a photosensitizer on a first conductive layer under reduced pressure;
irradiating the resist pattern through a photomask with light within a photosensitive wavelength region of the photosensitizer;
etching the first conductive layer by using the resist pattern as a mask to form a plurality of gate wirings and a plurality of gate electrodes over a substrate;
removing the resist pattern on the first conductive layer;
forming an insulating film over the plurality of gate wirings;
forming a plurality of first semiconductor islands over the gate electrodes with said insulating film interposed therebeween;
forming each of a plurality of channel protective layers over each of the plurality of first semiconductor islands;
forming a plurality of second semiconductor islands over the plurality of first semiconductor islands with the plurality of channel protective layers interposed therebeween;
forming a resist pattern by discharging a composition containing a photosensitizer on a second conductive layer under reduced pressure;
irradiating the resist pattern through a photomask with light within a photosensitive wavelength region of the photosensitizer;
etching the second conductive layer by using the resist pattern as a mask to form a plurality of pixel electrodes arranged in a matrix form over the substrate;
removing the resist pattern on the second conductive layer;
forming a resist pattern by discharging a composition containing a photosensitizer on a third conductive layer under reduced pressure;
irradiating the resist pattern through a photomask with light within a photosensitive wavelength region of the photosensitizer;
etching the third conductive layer by using the resist pattern as a mask to form a plurality of source wirings wherein said plurality of source wirings extend across said plurality of gate wirings; and
removing the resist pattern on the third conductive layer. - View Dependent Claims (17, 18)
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Specification