Low dielectric constant film produced from silicon compounds comprising silicon-carbon bond

• US 20040147109A1
• Filed: 01/13/2004
• Published: 07/29/2004
• Est. Priority Date: 02/11/1998
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Cheung, David, Jeng, Shin-Puu, Yau, Wai-Fan, Liu, Kuowei, Yu, Yung-Cheng
• Application Number:
  US10/756,122
• Publication Number:
  US 20040147109A1
• Time in Patent Office: Days
• US Class Current: 438/623
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02167 the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/7681 involving one or more buried masks
• CPC Class Codes: H01L 21/76828 thermal treatment
• CPC Class Codes: H01L 21/76829 characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
• CPC Class Codes: H01L 21/76832 Multiple layers
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76835 Combinations of two or more different dielectric layers having a low dielectric constant H01L21/76832 takes precedence
• CPC Class Codes: H01L 21/76837 : Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics

Abstract

A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH₃SiH₃, and N₂O.

Claims

1. A method comprising depositing on a substrate a plurality of layers, wherein one or more of the layers is a low dielectric constant oxidized organosilane layer comprising carbon, wherein the carbon content of the low dielectric constant oxidized organosilane layer is from 1% to 50% by atomic weight, and a top layer of the plurality of layers is a photoresist.

2. The method of claim 1, wherein the low dielectric constant oxidized organosilane layer is deposited in the presence of RF power from a mixture comprising an organosilane compound including the structure:

3. The method of claim 2, wherein the organosilane compound is methylsilane.

4. The method of claim 2, wherein the mixture further comprises an oxidizing gas.

5. The method of claim 4, wherein the oxidizing gas is N₂O.

6. The method of claim 2, wherein the organosilane compound includes the SiH_a(CH₃)_b(C₂H₅)_c(C₆H₅)_d, where a=1 to 3, b=0 to 3, c=0 to 3, d=0 to 3, and a+b+c+d=4, or the structure Si₂H_e(CH₃)_f(C₂H₅)_g(C₂H₅)_g(C₆H₅)_h, where e=1 to 5, f=0 to 5, g=0 to 5, h=0 to 5, and e+f+g+h=6.

7. The method of claim 1, wherein the low dielectric constant oxidized organosilane layer is deposited in the presence of RF power from a mixture comprising an organosilane compound comprising an organo group selected from the group consisting of alkyl, aryl, alkenyl, and cyclohexenyl groups.

8. The method of claim 1, further comprising etching the low dielectric constant oxidized organosilane layer using fluorine, carbon, and oxygen ions.

9. The method of claim 1, further comprising etching a pattern in the plurality of the layers.

10. The method of claim 1, wherein the dielectric constant of the low dielectric constant oxidized organosilane layer is about 3.0.

11. A method comprising depositing on a substrate a plurality of layers, wherein the plurality of layers comprises one low dielectric constant oxidized organosilane etch stop layer comprising carbon, wherein the carbon content of the low dielectric constant oxidized organosilane layer is from 1% to 50% by atomic weight, a layer selected from the group consisting of parylene, FSG, and silicon oxide layers, and a top layer of the plurality of layers that is a photoresist.

12. The method of claim 11, wherein the low dielectric constant oxidized organosilane etch stop layer is between two dielectric layers in the plurality of layers.

13. The method of claim 11, wherein the low dielectric constant oxidized organosilane etch stop layer is deposited in the presence of RF power from a mixture comprising an organosilane compound including the structure:

14. The method of claim 13, wherein the mixture further comprises an oxidizing gas.

15. A method comprising depositing on a substrate a plurality of layers, wherein two of the layers are low dielectric constant oxidized organosilane layers comprising carbon, wherein the carbon content of the low dielectric constant oxidized organosilane layer is from 1% to 50% by atomic weight, and a top layer of the plurality of layers is a photoresist.

16. The method of claim 15, wherein the plurality of layers further comprises a layer selected from the group consisting of parylene, FSG, silicon oxide, and silicon nitride layers.

17. The method of claim 15, wherein the plurality of layers comprises an etch stop layer adjacent both of the two low dielectric constant oxidized organosilane layers.

18. The method of claim 17, wherein the etch stop layer is a silicon oxide or silicon nitride layer.

19. The method of claim 15, where in the low dielectric constant oxidized organosilane layers are deposited in the presence of RF power from a mixture comprising an organosilane compound including the structure:

20. The method of claim 19, wherein the mixture further comprises an oxidizing gas.