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Low dielectric constant film produced from silicon compounds comprising silicon-carbon bond

  • US 20040147109A1
  • Filed: 01/13/2004
  • Published: 07/29/2004
  • Est. Priority Date: 02/11/1998
  • Status: Abandoned Application
First Claim
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1. A method comprising depositing on a substrate a plurality of layers, wherein one or more of the layers is a low dielectric constant oxidized organosilane layer comprising carbon, wherein the carbon content of the low dielectric constant oxidized organosilane layer is from 1% to 50% by atomic weight, and a top layer of the plurality of layers is a photoresist.

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