Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage

• US 20040149218A1
• Filed: 08/22/2003
• Published: 08/05/2004
• Est. Priority Date: 08/11/2000
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ramaswamy, Kartik, Hanawa, Hiroji, Collins, Kenneth S., Nguyen, Andrew, Al-Bayati, Amir, Gallo, Biagio, Monroy, Gonzalo Antonio
• Granted Patent: US 7,037,813 B2
• Time in Patent Office: Days
• US Class Current: 118/723I
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01L 21/2236 from or into a plasma phase

Abstract

A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpiece and the ceiling, and introducing into the chamber a process gas including the species to be implanted in the surface layer of the workpiece. The method includes generating from the process gas a plasma by capacitively coupling RF source power across the workpiece support and the ceiling or the sidewall from an RF source power generator. The method further includes applying an RF bias from an RF bias generator to the workpiece support.

Claims

75-1. The method of claim 75 further comprising:

masking devices on said workpiece of one conductivity type and exposing devices of an opposite conductivity type during ion implantation of said first species in said plasma immersion ion implantation reactor;

masking devices on said workpiece of said opposite conductivity type and exposing devices of the one conductivity type during ion implantation of said second species in said ion beam implantation apparatus.

77. The method of claim 76 wherein said first species is of a lower mass than said second species.

78. The method of claim 76 wherein said first species comprises boron and said second species comprises arsenic.