Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
First Claim
1. A semiconductor structure comprising:
- a monocrystalline oxide material; and
a monocrystalline compound semiconductor material of first type formed overlying the monocrystalline oxide material.
2 Assignments
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Accused Products
Abstract
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
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Citations
143 Claims
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1. A semiconductor structure comprising:
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a monocrystalline oxide material; and
a monocrystalline compound semiconductor material of first type formed overlying the monocrystalline oxide material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor structure comprising:
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a monocrystalline oxide material having a first characteristic; and
a monocrystalline compound semiconductor material having a second characteristic grown on the monocrystalline oxide material; and
wherein the first and second characteristics relate to each other in a manner selected from the group consisting of;
the first and second characteristics are lattice constants and the first and second characteristics are substantially matched; and
the first and second characteristics are related to crystal orientation of the monocrystalline oxide material and the monocrystalline compound semiconductor material and wherein the crystal orientations are rotated with respect to each other. - View Dependent Claims (12, 13, 14, 15)
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16. A semiconductor structure comprising:
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a monocrystalline semiconductor substrate;
an amorphous layer overlying the monocrystalline semiconductor substrate;
a monocrystalline oxide layer overlying the amorphous layer; and
a monocrystalline compound semiconductor layer overlying the monocrystalline oxide layer. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24)
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25. A semiconductor structure comprising:
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a monocrystalline substrate characterized by a first lattice constant;
a monocrystalline insulator layer having a second lattice constant different than the first lattice constant overlying the monocrystalline substrate; and
a monocrystalline compound semiconductor layer having a third lattice constant different than the first lattice constant overlying the monocrystalline insulator layer. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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36. A semiconductor structure comprising:
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a monocrystalline substrate characterized by a first lattice constant;
a monocrystalline nitride layer having a second lattice constant different than the first lattice constant overlying the monocrystalline substrate; and
a monocrystalline compound semiconductor layer having a third lattice constant different than the first and second lattice constants overlying the monocrystalline nitride layer. - View Dependent Claims (37)
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38. A semiconductor structure comprising:
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a first monocrystalline semiconductor substrate comprising silicon and having a first region and a second region;
an intermediate layer comprising a silicon oxide overlying the first region;
a first monocrystalline oxide layer overlying the intermediate layer;
a second monocrystalline semiconductor layer overlying the first monocrystalline oxide layer;
a second monocrystalline oxide layer overlying the second monocrystalline semiconductor layer; and
a third monocrystalline semiconductor layer overlying the second monocrystalline oxide layer and wherein at least one of the second monocrystalline semiconductor layer and the third semiconductor layer comprises a compound semiconductor material. - View Dependent Claims (39, 40, 41, 42, 43, 44)
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45. A semiconductor device comprising:
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a first monocrystalline semiconductor layer comprising a first region and a second region;
an electrical semiconductor component positioned at least partially within the first region;
a second monocrystalline compound semiconductor layer overlying the second region; and
a second semiconductor component positioned at least partially within the second monocrystalline compound semiconductor layer. - View Dependent Claims (46, 47, 48, 49)
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50. A process for fabricating a semiconductor structure comprising the steps of:
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providing a monocrystalline semiconductor substrate comprising silicon;
epitaxially growing a monocrystalline oxide layer overlying the monocrystalline substrate;
oxidizing the monocrystalline semiconductor substrate during the step of epitaxially growing to form a silicon oxide layer between the monocrystalline semiconductor substrate and the monocrystalline oxide layer;
epitaxially growing a monocrystalline compound semiconductor layer overlying the monocrystalline oxide layer. - View Dependent Claims (51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70)
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71. A process for fabricating a semiconductor structure comprising the steps of:
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providing a monocrystalline semiconductor substrate;
epitaxially growing a monocrystalline oxide layer overlying the monocrystalline substrate;
oxidizing the monocrystalline semiconductor substrate during the step of epitaxially growing to form a silicon oxide layer between the monocrystalline semiconductor substrate and the monocrystalline oxide layer;
epitaxially growing a monocrystalline compound semiconductor layer overlying the monocrystalline oxide layer.
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72. A process for fabricating a semiconductor structure comprising the steps of:
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providing a monocrystalline oxide layer having a surface;
forming a template layer on the surface; and
epitaxially growing a monocrystalline compound semiconductor layer overlying the template. - View Dependent Claims (73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 99)
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91. A process for fabricating a semiconductor structure comprising the steps of:
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providing a monocrystalline semiconductor substrate;
forming an accommodating buffer layer overlying the monocrystalline semiconductor substrate;
forming an amorphous intermediate layer between the monocrystalline semiconductor substrate and the accommodating buffer layer; and
epitaxially growing a monocrystalline compound semiconductor layer overlying the accommodating buffer layer. - View Dependent Claims (92, 93, 94, 95, 96)
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97. A process for fabricating a semiconductor structure comprising the steps of:
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providing a monocrystalline silicon substrate comprising a first region and a second region, the second region having an oxidized surface;
forming a CMOS circuit in the first region;
depositing a material comprising strontium onto the second region having an oxidized surface and reacting the material with the oxidized surface to form a first template layer;
depositing a monocrystalline oxide layer comprising strontium, titanium and oxygen overlying the first template layer by introducing strontium, titanium, and a partial pressure of oxygen to the template layer;
increasing the partial pressure of oxygen to grow an amorphous layer of silicon oxide on the second region;
terminating the step of depositing a monocrystalline oxide layer by depositing a second template layer comprising a monolayer comprising titanium;
depositing a layer of a monocrystalline compound semiconductor material comprising gallium and arsenic overlying the second template layer;
forming a semiconductor component in the layer of a monocrystalline compound semiconductor material; and
depositing a metallic conductor configured to electrically couple the CMOS circuit and the semiconductor component.
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98. A semiconductor structure comprising:
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a monocrystalline semiconductor substrate;
a monocrystalline oxide layer comprising SrzBa1-zTiO3 overlying the monocrystalline semiconductor substrate, wherein z ranges from 0 to 1; and
an amorphous layer positioned between the monocrystalline semiconductor substrate and the monocrystalline oxide layer. - View Dependent Claims (100, 101, 102, 103)
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104. A communicating device including an integrated circuit, wherein the integrated circuit comprises:
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an accommodating buffer layer;
a compound semiconductor portion overlying the accommodating buffer layer, wherein the compound semiconductor portion includes a feature selected from a group consisting of an amplifier, a modulating circuit, and a demodulating circuit; and
a Group IV semiconductor portion including a digital logic portion coupled to the feature. - View Dependent Claims (105, 106, 107, 108, 109, 110)
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111. A communicating device including:
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a signal transceiving means;
an integrated circuit including;
a compound semiconductor portion having an amplifier coupled to the signal transceiving means;
a Group IV semiconductor portion having a digital signal processing means coupled to the amplifier; and
a unit coupled to the integrated circuit. - View Dependent Claims (112, 113, 114, 115, 116, 117, 118)
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119. An integrated circuit comprising:
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a monocrystalline Group IV semiconductor substrate;
a compound semiconductor portion including a laser overlying the monocrystalline Group IV semiconductor substrate; and
a Group IV semiconductor portion including an electrical component coupled to the laser, wherein the Group IV semiconductor portion lies within or over the monocrystalline Group IV semiconductor substrate. - View Dependent Claims (120, 121, 122, 123, 124, 125, 126, 127, 128, 129)
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130. An integrated circuit comprising:
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a first accommodating buffer layer;
a first monocrystalline semiconductor layer overlying the first accommodating buffer layer;
a second accommodating buffer layer overlying the first monocrystalline semiconductor layer; and
a second monocrystalline semiconductor layer overlying the second accommodating buffer layer. - View Dependent Claims (131, 132, 133, 134)
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135. An integrated circuit comprising:
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an accommodating buffer layer; and
active devices, wherein all the active devices lie at least partially within or over a monocrystalline compound semiconductor layer that overlies the accommodating buffer layer. - View Dependent Claims (136, 137, 138, 139, 140, 141, 142, 143)
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Specification