Structure and method for fabricating semiconductor microresonator devices
First Claim
1. A microresonator device, comprising:
- a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a first electro-optical waveguide overlying the monocrystalline silicon substrate;
a second electro-optical waveguide overlying the monocrystalline silicon substrate; and
a first resonator overlying the monocrystalline silicon substrate, said first resonator separated from said first waveguide by a first gap and separated from said second waveguide by a second gap.
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Abstract
High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy and epitaxial growth of single crystal silicon onto single crystal oxide materials. A microresonator device is formed overlying the monocrystalline substrate. Portions or an entirety of the microresonator device can also overly the accommodating buffer layer, or the monocrystalline material layer.
132 Citations
16 Claims
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1. A microresonator device, comprising:
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a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a first electro-optical waveguide overlying the monocrystalline silicon substrate;
a second electro-optical waveguide overlying the monocrystalline silicon substrate; and
a first resonator overlying the monocrystalline silicon substrate, said first resonator separated from said first waveguide by a first gap and separated from said second waveguide by a second gap. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A microresonator device, comprising:
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a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a first waveguide overlying the monocrystalline silicon substrate;
a second waveguide overlying the monocrystalline silicon substrate;
a first resonator overlying the monocrystalline silicon substrate, said first resonator being separated from said first waveguide by a first gap and separated from said second waveguide by a second gap; and
an electro-optical layer overlying the moncrystalline silicon substrate, said electro-optical layer filling in the first gap and the second gap. - View Dependent Claims (8, 9, 10)
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11. A microresonator device, comprising:
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a monocrystalline silicon substrate;
an amorphous oxide material overlying the monocrystalline silicon substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a first waveguide overlying the monocrystalline silicon substrate;
a second waveguide overlying the monocrystalline silicon substrate;
a first resonator overlying the monocrystalline silicon substrate, said resonator being separated from said first waveguide by a first gap and separated from said second waveguide by a second gap; and
a first electrode and a second electrode operable to facilitate an injection of current in said first resonator to thereby produce an onset of gain. - View Dependent Claims (12, 13)
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14. A microresonator device, comprising:
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a silicon-on-insulator substrate;
an amorphous oxide material overlying the monocrystalline top silicon layer of the silicon-on-insulator substrate;
a monocrystalline perovskite oxide material overlying the amorphous oxide material;
a first waveguide overlying said silicon-on-insulator substrate;
a second waveguide overlying said silicon-on-insulator substrate; and
a resonator including a GaAs seed layer overlying the monocrystalline perovskite oxide material, a compound semiconductor material layer overlying said GaAs seed layer to thereby provide a gain medium for said resonator, and a top electrode and a bottom electrode operable to facilitate an injection of current into said compound semiconductor material layer to thereby produce an onset of gain. - View Dependent Claims (15, 16)
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Specification