Nanolayer deposition process

• US 20040151845A1
• Filed: 02/04/2003
• Published: 08/05/2004
• Est. Priority Date: 02/04/2003
• Status: Active Grant

• Current Assignee: ASM International NV
• Original Assignee: Tegal Corp. (Rennova Health, Inc.)
• Inventors: Nguyen, Tue, Nguyen, Tai Dung
• Granted Patent: US 7,713,592 B2
• Time in Patent Office: Days
• US Class Current: 427/569
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/56 After-treatment

Abstract

A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The nanolayer deposition process is a cyclic sequential deposition process, comprising the first step of introducing a first plurality of precursors to deposit a thin film with the deposition process not self limiting, then a second step of purging the first set of precursors and a third step of introducing a second plurality of precursors to modify the deposited thin film. The deposition step in the NLD process using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film such as a modification of film composition, a doping or a removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film. The additional layer can react with the existing layer to form a compound layer, or can have minimum reaction to form a nanolaminate film.

Claims

1. A deposition method to deposit a film comprising the steps of:

a. Introducing a first plurality of precursors to deposit a thin layer on a substrate, the deposition process being not self limiting;

b. Purging the first precursors; and

c. Introducing a second plurality of precursors to modify the deposited thin layer, the second plurality of precursors having at least one precursor different from the first plurality of precursors.

2. The method of claim 1, further comprising a step d, after step c, of:

d. Purging the second precursors.

3. The method of claim 1, further comprising a plurality of the steps a-c until a desired film thickness is reached.

4. The method of claim 2, further comprising a plurality of the steps a-d until a desired film thickness is reached.

5. The method of claim 1, wherein the step a comprises a plasma energy in the deposition process.

6. The method of claim 1, wherein the step a comprises a thermal energy in the deposition process.

7. The method of claim 1, wherein the step c comprises a plasma energy in the modification process.

8. The method of claim 1, wherein the step c comprises a high density plasma energy in the modification process.

9. The method of claim 1, wherein the step c comprises a high pressure plasma energy in the modification process, the high pressure being in the range of between 0.1 to 5 Torr.

10. The method of claim 1, wherein the step c comprises a thermal energy in the modification process.

11. The method of claim 1, wherein the step c comprises a bias voltage in the modification process.

12. The method of claim 1, wherein the first plurality of precursors in steps a comprises CVD precursors.

13. The method of claim 1, wherein the first plurality of precursors in steps a comprises MOCVD precursors.

14. The method of claim 1, wherein the second plurality of precursors in steps c comprises process gases, selected from a group consisting of nitrogen, oxygen, hydrogen, ammonia, NF₃, silane, ozone, argon.

15. The method of claim 1, wherein the second plurality of precursors in steps c comprises CVD precursors.

16. The method of claim 1, wherein the second plurality of precursors in steps c comprises MOCVD precursors.

17. The method of claim 1, wherein the deposited film is non-epitaxial.