Sialon-based oxynitride phosphor, process for its production, and use thereof
First Claim
1. An α
- -sialon-based oxynitride phosphor characterized in that the content of α
-sialon represented by the general formula;
MxSi12−
(m+n)Al(m+n)OnN16−
n;
Lny (wherein M is at least one metal selected from among Li, Ca, Mg, Y or lanthanide metals excluding La and Ce, Ln is at least one lanthanide metal selected from among Ce, Pr and La or at least one lanthanide metal selected from among Eu, Dy, Er, Tb and Yb, 0.3≦
x+y<
1.5, 0<
y<
0.7, 0.3≦
m<
4.5, 0<
n<
2.25, and m=ax+by, where a is the valence of the metal M and b is the valence of the lanthanide metal Ln), wherein all or a portion of the metal M dissolved in the α
-sialon is replaced with the lanthanide metal Ln as the luminescence center, is 75 wt % or greater when the lanthanide metal Ln is at least one lanthanide metal selected from among Ce, Pr and La and 90 wt % or greater when the lanthanide metal Ln is at least one lanthanide metal selected from among Eu, Dy, Er, Tb and Yb, and in that the content of metal impurities other than the metal M, lanthanide metal Ln, silicon, IIIA elements (aluminum, gallium), oxygen and nitrogen, is no greater than 0.01 wt %.
2 Assignments
0 Petitions
Accused Products
Abstract
An α-sialon-based oxynitride phosphor characterized in that the content of α-sialon represented by the general formula: MxS12−(m+n)Al(m+n)OnN16−n:Lny (wherein M is at least one metal selected from among Li, Ca, Mg, Y or lanthanide metals excluding La and Ce, Ln is at least one lanthanide metal selected from among Ce, Pr and La or at least one lanthanide metal selected from among Eu, Dy, Er, Tb and Yb, 0.3≦x+y<1.5, 0<y<0.7, 0.3≦m<4.5, 0<n<2.25, and m=ax+by, where a is the valence of the metal M and b is the valence of the lanthanide metal Ln), wherein all or a portion of the metal M dissolved in the α-sialon is replaced with the lanthanide metal Ln as the luminescence center, is 75 wt % or greater when the lanthanide metal Ln is at least one lanthanide metal selected from among Ce, Pr and La and 90 wt % or greater when the lanthanide metal Ln is at least one lanthanide metal selected from among Eu, Dy, Er, Tb and Yb, and in that the content of metal impurities other than the metal M, lanthanide metal Ln, silicon, IIIA elements (aluminum, gallium), oxygen and nitrogen, is no greater than 0.01 wt %.
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Citations
16 Claims
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1. An α
- -sialon-based oxynitride phosphor characterized in that the content of α
-sialon represented by the general formula;
MxSi12−
(m+n)Al(m+n)OnN16−
n;
Lny(wherein M is at least one metal selected from among Li, Ca, Mg, Y or lanthanide metals excluding La and Ce, Ln is at least one lanthanide metal selected from among Ce, Pr and La or at least one lanthanide metal selected from among Eu, Dy, Er, Tb and Yb, 0.3≦
x+y<
1.5,0<
y<
0.7,0.3≦
m<
4.5,0<
n<
2.25, andm=ax+by, where a is the valence of the metal M and b is the valence of the lanthanide metal Ln), wherein all or a portion of the metal M dissolved in the α
-sialon is replaced with the lanthanide metal Ln as the luminescence center,is 75 wt % or greater when the lanthanide metal Ln is at least one lanthanide metal selected from among Ce, Pr and La and 90 wt % or greater when the lanthanide metal Ln is at least one lanthanide metal selected from among Eu, Dy, Er, Tb and Yb, and in that the content of metal impurities other than the metal M, lanthanide metal Ln, silicon, IIIA elements (aluminum, gallium), oxygen and nitrogen, is no greater than 0.01 wt %. - View Dependent Claims (2, 3, 4, 5, 6, 15, 16)
- -sialon-based oxynitride phosphor characterized in that the content of α
-
7. A process for producing an α
- -sialon-based oxynitride phosphor, wherein a mixed powder comprising a nitrogen-containing silane compound and/or amorphous silicon nitride powder having the oxygen content adjusted to 1-5 wt %, AlN and/or Al powder, an oxide of a metal M or a precursor substance which is converted to an oxide of a metal M upon thermal decomposition, and an oxide of a lanthanide metal Ln or a precursor substance which is converted to an oxide of a lanthanide metal Ln upon thermal decomposition, in a combination such that the metal impurity content is no greater than 0.01 wt % as calculated on the basis of the product being represented by the general formula;
MxSi12−
(m+n)Al(m+n)OnN16−
n;
Lny(wherein M is at least one metal selected from among Li, Ca, Mg, Y or lanthanide metals excluding La and Ce, and Ln is at least one lanthanide metal selected from among Ce, Pr and La or at least one lanthanide metal selected from among Eu, Dy, Er, Tb and Yb, 0.3≦
x+y<
1.5,0<
y<
0.7,0.3≦
m<
4.5,0<
n<
2.25, andm=ax+by, where a is the valence of the metal M and b is the valence of the lanthanide metal Ln), is fired at 1400-2000°
C. in a nitrogen-containing inert gas atmosphere.- View Dependent Claims (9, 10, 11, 12, 13, 14)
- -sialon-based oxynitride phosphor, wherein a mixed powder comprising a nitrogen-containing silane compound and/or amorphous silicon nitride powder having the oxygen content adjusted to 1-5 wt %, AlN and/or Al powder, an oxide of a metal M or a precursor substance which is converted to an oxide of a metal M upon thermal decomposition, and an oxide of a lanthanide metal Ln or a precursor substance which is converted to an oxide of a lanthanide metal Ln upon thermal decomposition, in a combination such that the metal impurity content is no greater than 0.01 wt % as calculated on the basis of the product being represented by the general formula;
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8. A process for producing an α
- -sialon-based oxynitride phosphor, wherein a mixture obtained by adding a pre-synthesized α
-sialon powder represented by the general formula;
MxSi12−
(m+n)Al(m+n)OnN16−
n (wherein the definitions in the formula are the same as below) or the general formula;
MxS12−
(m+n)Al(m+n)OnN16−
n;
Lny (wherein the definitions of M, Ln, x, y, m and n are the same as below) to a mixed powder comprising a nitrogen-containing silane compound and/or amorphous silicon nitride powder having the oxygen content adjusted to 1-5 wt %, AlN and/or Al powder, an oxide of a metal M or a precursor substance which is converted to an oxide of a metal M upon thermal decomposition, and an oxide of a lanthanide metal Ln or a precursor substance which is converted to an oxide of a lanthanide metal Ln upon thermal decomposition, in a combination such that the metal impurity content is no greater than 0.01 wt % as calculated on the basis of the product being represented by the general formula;
MxSi12−
(m+n)Al(m+n)OnN16−
n;
Lny(wherein M is at least one metal selected from among Li, Ca, Mg, Y or lanthanide metals excluding La and Ce, and Ln is at least one lanthanide metal selected from among Ce, Pr and La or at least one lanthanide metal selected from among Eu, Dy, Er, Tb and Yb, 0.323 x+y<
1.5,0<
y<
0.7,0.3≦
m<
4.5,0<
n<
2.25, andm=ax+by, where a is the valence of the metal M and b is the valence of the lanthanide metal Ln), is fired at 1400-2000°
C. in a nitrogen-containing inert gas atmosphere.
- -sialon-based oxynitride phosphor, wherein a mixture obtained by adding a pre-synthesized α
Specification