Power semiconductor switching element
First Claim
1. A semiconductor element comprising:
- a semiconductor substrate of a first conductivity type having a first major surface and a second major surface opposing the first major surface;
a drift layer of the first conductivity type formed on the first major surface of said semiconductor substrate;
a well layer of a second conductivity type selectively formed in a surface of said drift layer;
a source layer of the first conductivity type selectively formed in a surface of said well layer;
a trench formed to reach at least an inside of said drift layer from the surface of said source layer through said well layer;
a buried electrode formed in said trench through a first insulating film;
a control electrode formed on said drift layer, said well layer, and said source layer through a second insulating film;
a first main electrode formed on the second major surface of said semiconductor substrate; and
a second main electrode connected to said source layer and said well layer.
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Abstract
A semiconductor element of this invention includes a drift layer of a first conductivity type formed on a semiconductor substrate of the first conductivity type, a well layer of a second conductivity type selectively formed in the surface of the drift layer, a source layer of the first conductivity type selectively formed in the surface of the well layer, a trench formed to reach at least the inside of the drift layer from the surface of the source layer through the well layer, a buried electrode formed in the trench through a first insulating film, and a control electrode formed on the drift layer, the well layer, and the source layer through a second insulating film.
46 Citations
47 Claims
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1. A semiconductor element comprising:
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a semiconductor substrate of a first conductivity type having a first major surface and a second major surface opposing the first major surface;
a drift layer of the first conductivity type formed on the first major surface of said semiconductor substrate;
a well layer of a second conductivity type selectively formed in a surface of said drift layer;
a source layer of the first conductivity type selectively formed in a surface of said well layer;
a trench formed to reach at least an inside of said drift layer from the surface of said source layer through said well layer;
a buried electrode formed in said trench through a first insulating film;
a control electrode formed on said drift layer, said well layer, and said source layer through a second insulating film;
a first main electrode formed on the second major surface of said semiconductor substrate; and
a second main electrode connected to said source layer and said well layer. - View Dependent Claims (5, 9, 13, 17, 21, 25, 29, 33, 42)
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2. A semiconductor element comprising:
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a semiconductor substrate of a first conductivity type having a first major surface and a second major surface opposing the first major surface;
a drift layer of the first conductivity type formed on the first major surface of said semiconductor substrate;
a well layer of a second conductivity type selectively formed in a surface of said drift layer;
a source layer of the first conductivity type selectively formed in a surface of said well layer;
a trench formed to reach at least an inside of said drift layer from the surface of said source layer through said well layer;
a buried electrode formed through a first insulating film in a region extending from said trench of said drift layer to a bottom surface of said trench;
a control electrode formed in a region extending from said source layer to said drift layer through said well layer in said trench to be insulated from said buried electrode through a second insulating film;
a first main electrode formed on the second major surface of said semiconductor substrate; and
a second main electrode connected to said source layer and said well layer. - View Dependent Claims (6, 10, 14, 18, 22, 26, 30, 34, 43)
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3. A semiconductor element comprising:
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a semiconductor substrate of a first conductivity type having a first major surface and a second major surface opposing the first major surface;
a drift layer of the first conductivity type formed on the first major surface of said semiconductor substrate;
a trench formed to reach at least an inside of said drift layer from a surface of said drift layer;
a buried electrode formed in said trench through a first insulating film;
a well layer of a second conductivity type selectively formed in a surface of said drift layer between said trenches;
a source layer of the first conductivity type selectively formed in a surface of said well layer;
a control electrode formed on said drift layer, said well layer, and said source layer through a second insulating film;
a first main electrode formed on the second major surface of said semiconductor substrate; and
a second main electrode connected to said source layer and said well layer. - View Dependent Claims (7, 11, 15, 19, 23, 27, 31, 35, 37, 38, 44)
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4. A semiconductor element comprising:
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a semiconductor substrate of a first conductivity type having a first major surface and a second major surface opposing the first major surface;
a drift layer of the first conductivity type formed on the first major surface of said semiconductor substrate;
a well layer of a second conductivity type selectively formed in a surface of said drift layer;
a first trench formed to reach at least an inside of said drift layer through said well layer;
a buried electrode formed in said first trench through a first insulating film;
a source layer of the first conductivity type selectively formed in a surface of said well layer between said first trenches;
a second trench formed to reach an inside of said drift layer from a surface of said source layer through said well layer;
a control electrode formed in said second trench through a second insulating film;
a first main electrode formed on the second major surface of said semiconductor substrate; and
a second main electrode connected to said source layer and said well layer. - View Dependent Claims (8, 12, 16, 20, 24, 28, 32, 36, 39, 40, 41, 45)
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46. A semiconductor element comprising:
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a semiconductor substrate of a first conductivity type having a first major surface and a second major surface opposing the first major surface;
a drift layer of the first conductivity type formed on the first major surface of said semiconductor substrate;
a well layer of a second conductivity type selectively formed in a surface of said drift layer;
a buried diffusion layer of the second conductivity type formed to reach at least an inside of said drift layer through said well layer;
a source layer of the first conductivity type selectively formed in a surface of said well layer between said buried diffusion layers;
a trench formed to reach an inside of said drift layer from a surface of said source layer through said well layer;
a control electrode formed in said trench through an insulating film;
a first main electrode formed on the second major surface of said semiconductor substrate; and
a second main electrode connected to said source layer and said well layer.
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47. A semiconductor element comprising:
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a semiconductor substrate of a first conductivity type having a first major surface and a second major surface opposing the first major surface;
a drift layer of the first conductivity type formed on the first major surface of said semiconductor substrate;
a buried diffusion layer of a second conductivity type formed to reach a portion near said semiconductor substrate from a surface of said drift layer;
a well layer of the second conductivity type formed in the surface of said drift layer;
a source layer of the first conductivity type selectively formed in a surface of said well layer between said buried diffusion layers;
a trench formed to reach an inside of said drift layer from a surface of said source layer through said well layer and become shallower than said buried diffusion layer;
a control electrode formed in said trench through an insulating film;
a first main electrode formed on the second major surface of said semiconductor substrate; and
a second main electrode connected to said source layer and said well layer.
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Specification