Transfer of a thin layer from a wafer comprising a buffer layer
First Claim
1. A method of preparing a semiconductor wafer, comprising:
- growing a first layer of a first material on a matching substrate comprising a matching layer;
growing a second layer of a semiconductor second material, different from the first material, in a relaxed state on the first layer to form a boundary between the first and second layers and to form a composite structure which comprises the matching, first, and second layers, wherein the first and second layers each have substantially the same first lattice parameter;
creating a region of weakness in the matching substrate to facilitate splitting; and
removing the first layer from the second layer to produce a boundary on the second layer that is substantially smooth and of substantially uniform thickness.
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Abstract
A process for producing a structure of a thin layer of semiconductor material obtained from a composite structure donor wafer. The donor wafer includes a lattice parameter matching layer of a matching substrate that advantageously has an upper layer of semiconductor material having a first lattice parameter. A film of semiconductor material having a second, nominal, lattice parameter that is substantially different from the first lattice parameter is strained by the matching layer. A region of weakness is created in the matching substrate to facilitate splitting. A relaxed layer has a nominal lattice parameter that is substantially identical to the first lattice parameter. The relaxed layer is transferred to a receiving substrate. A number of different wafers can be made by this process.
64 Citations
35 Claims
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1. A method of preparing a semiconductor wafer, comprising:
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growing a first layer of a first material on a matching substrate comprising a matching layer;
growing a second layer of a semiconductor second material, different from the first material, in a relaxed state on the first layer to form a boundary between the first and second layers and to form a composite structure which comprises the matching, first, and second layers, wherein the first and second layers each have substantially the same first lattice parameter;
creating a region of weakness in the matching substrate to facilitate splitting; and
removing the first layer from the second layer to produce a boundary on the second layer that is substantially smooth and of substantially uniform thickness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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26. A semiconductor wafer, comprising:
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a matching substrate that includes a matching layer having at least a first lattice parameter, the matching substrate having a region of weakness configured to facilitate splitting;
a first layer of a first material grown directly on the matching layer and having a lattice parameter that is substantially that same as the first lattice parameter; and
a second layer grown on the first layer and comprising a semiconductor second material in a relaxed state that is different from the first material and that has a lattice parameter that is substantially the same as the first lattice parameter. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33)
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34. A method of preparing a semiconductor wafer, comprising:
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growing a first layer of a first material on a matching substrate comprising a matching layer;
growing a second layer of a semiconductor second material, different from the first material, in a relaxed state on the first layer to form a boundary between the first and second layers and to form a composite structure which comprises the matching, first, and second layers, wherein the first and second layers each have substantially the same first lattice parameter;
creating a region of weakness in the matching substrate to facilitate splitting;
splitting the composite structure into;
an unfinished wafer that includes the second layer and at least a remaining portion of the first layer, and a handle wafer that includes a portion of the matching layer;
thickening the remaining portion of the first layer. - View Dependent Claims (35)
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Specification