Barrier free copper interconnect by multi-layer copper seed
First Claim
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1. A method for creation of a barrier-free copper interconnect, comprising:
- providing an opening in a layer of dielectric, over a semiconductor substrate;
providing a first seed layer comprising copper alloy over sidewalls of said opening;
providing a second seed layer comprising copper over the surface of said first seed layer;
filling said opening with copper, creating a copper interconnect surrounded by the first and second seed layers; and
annealing said first and second seed layers, creating a barrier-less seed layer around said copper.
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Abstract
A new method is provided for the creation of a copper seed interface capability. A first seed layer of copper alloy and a second seed layer of copper is provided over an opening in a layer of dielectric. The opening is filled with copper, the first and second seed layers are annealed.
47 Citations
43 Claims
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1. A method for creation of a barrier-free copper interconnect, comprising:
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providing an opening in a layer of dielectric, over a semiconductor substrate;
providing a first seed layer comprising copper alloy over sidewalls of said opening;
providing a second seed layer comprising copper over the surface of said first seed layer;
filling said opening with copper, creating a copper interconnect surrounded by the first and second seed layers; and
annealing said first and second seed layers, creating a barrier-less seed layer around said copper. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 14, 17, 21)
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9. A method for the creation of a barrier-free copper interconnect, comprising steps of:
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providing an opening in a layer of dielectric, over a semiconductor substrate;
depositing a first seed layer comprising copper alloy over the surface of the layer of dielectric, including inside surfaces of said opening;
depositing a second seed layer comprising copper over the surface of the first seed layer;
depositing a layer of copper over the second seed layer;
annealing said first and second seed layers; and
removing the layer of copper and the first and second seed layers from the surface of the layer of dielectric. - View Dependent Claims (10, 11, 15, 18, 22)
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12. A method for the creation of a barrier-free copper interconnect, comprising steps of:
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providing an opening in a first layer of dielectric, over a semiconductor substrate;
providing at least one first layer of copper alloy over inside surfaces of the opening;
providing at least one second layer of copper over the first layer of the copper alloy;
providing a third layer of copper over the surface of said second layer of copper;
annealing said first layer of copper alloy and the second layer of copper by applying a temperature of no less than about 350 degrees C. for a time of no less than about 10 minutes, thereby diffusing doping elements of said first layer of copper alloy, creating a barrier-less seed layer surrounding the copper interconnect;
polishing the surface of said deposited third layer of copper, removing said at least one first layer of copper alloy and said least one second layer of copper and said third layer of copper from the surface of said first layer of dielectric, creating a copper interconnect in said first layer of dielectric; and
depositing a second layer of dielectric over the surface of the first layer of dielectric, including the surface of the copper interconnect created in the first layer of dielectric. - View Dependent Claims (13, 16, 19, 20, 23)
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24. A method for creation of a barrier-free copper interconnect, comprising:
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providing an opening in a layer of dielectric, over a semiconductor substrate;
depositing an interface layer over the surface of the layer of dielectric and inside surfaces of the opening, the interface layer comprising;
(i) at least one first seed layer comprising copper alloy;
(ii) at least one second seed layer comprising copper;
depositing a layer of copper over the interface layer;
annealing the interface layer; and
removing the layer of copper and the interface layer from the surface of the layer of dielectric. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32)
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33. A barrier-free copper interconnect, comprising:
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an opening provided in a layer of dielectric, over a semiconductor substrate;
an interface layer deposited over the surface of the layer of dielectric and inside surfaces of the opening, the interface layer comprising;
(i) at least one first seed layer comprising copper alloy;
(ii) at least one second seed layer comprising copper; and
a layer of copper deposited over the interface layer. - View Dependent Claims (34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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Specification