High-powered light emitting device with improved thermal properties
First Claim
1. A light emitting device comprising:
- a first semiconductor layer of a first conductivity type;
an active region overlying the first semiconductor layer, wherein the active region is capable of emitting light;
a second semiconductor layer of a second conductivity type overlying the active region;
a first contact connected to the first semiconductor layer; and
a second contact connected to the second semiconductor layer;
wherein at least one of the first contact and the second contact has a thickness greater than 3.5 microns.
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Accused Products
Abstract
A light emitting device includes a first semiconductor layer of a first conductivity type, an active region, and a second semiconductor layer of a second conductivity type. First and second contacts are connected to the first and second semiconductor layers. In some embodiments at least one of the first and second contacts has a thickness greater than 3.5 microns. In some embodiments, a first heat extraction layer is connected to one of the first and second contacts. In some embodiments, one of the first and second contacts is connected to a submount by a solder interconnect having a length greater than a width. In some embodiments, an underfill is disposed between a submount and one of the first and second interconnects.
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Citations
29 Claims
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1. A light emitting device comprising:
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a first semiconductor layer of a first conductivity type;
an active region overlying the first semiconductor layer, wherein the active region is capable of emitting light;
a second semiconductor layer of a second conductivity type overlying the active region;
a first contact connected to the first semiconductor layer; and
a second contact connected to the second semiconductor layer;
wherein at least one of the first contact and the second contact has a thickness greater than 3.5 microns. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method of operating a light emitting device, the method comprising:
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forming a first semiconductor layer of a first conductivity type;
forming an active region overlying the first semiconductor layer;
forming a second semiconductor layer of a second conductivity type overlying the active region;
selecting at least one of an area, thickness, and material of one of a first contact and a second contact to reduce a temperature gradient within the device during operation to less than about 30 K/mm;
forming the first contact electrically connected to the first semiconductor layer;
forming a second contact electrically connected to the second semiconductor layer; and
operating the device at a current density greater than 143 A/cm2;
wherein a maximum temperature gradient within the device is less than 30 K/mm during operation. - View Dependent Claims (23, 24, 25, 26)
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27. A light emitting device comprising:
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a substrate;
a first semiconductor layer of a first conductivity type overlying the substrate;
an active region overlying the first semiconductor layer, wherein the active region is capable of emitting light;
a second semiconductor layer of a second conductivity type overlying the active region;
a first contact connected to the first semiconductor layer; and
a second contact connected to the second semiconductor layer, the second contact comprising a plurality of layers including a heat extraction layer, the second contact having a thickness greater than 3.5 microns;
a submount;
an interconnect disposed between the submount and one of the first and second contacts, wherein the interconnect physically and electrically connects the submount to one of the first and second contacts and wherein the interconnect has a substantially rectangular vertical cross section; and
an underfill disposed between the submount and the substrate. - View Dependent Claims (28, 29)
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Specification