Methods for marking a bare semiconductor die

• US 20040161876A1
• Filed: 02/13/2004
• Published: 08/19/2004
• Est. Priority Date: 08/25/2000
• Status: Active Grant

• Current Assignee: Bret K. Street, William D. Tandy
• Original Assignee: Bret K. Street, William D. Tandy
• Inventors: Street, Bret K., Tandy, William D.
• Granted Patent: US 7,094,618 B2
• Time in Patent Office: Days
• US Class Current: 438/106
• CPC Class Codes: H01L 21/67282 Marking devices
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2223/54473 for use after dicing
• CPC Class Codes: H01L 2223/5448 Located on chip prior to dicing and remaining on chip after dicing
• CPC Class Codes: H01L 2224/274 by blanket deposition of the material of the layer connector
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/83856 Pre-cured adhesive, i.e. B-stage adhesive
• CPC Class Codes: H01L 23/544 Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps test patterns for characterising or monitoring manufacturing processes H01L22/00
• CPC Class Codes: H01L 23/573 using passive means
• CPC Class Codes: H01L 24/27 Manufacturing methods
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/0665 Epoxy resin
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: Y10S 438/90 Bulk effect device making
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

The present invention provides a method and apparatus for marking a semiconductor wafer or device. The method and apparatus have particular application to wafers or devices which have been subjected to a thinning process, including back grinding in particular. The present method comprises reducing the cross-section of a wafer or device, applying a tape having optical energy-markable properties over a surface or edge of the wafer or device, and exposing the tape to an optical energy source to create an identifiable mark. A method for manufacturing an integrated circuit chip and for identifying a known good die are also disclosed. The apparatus of the present invention comprises a multilevel laser-markable tape for application to a bare semiconductor die. In the apparatus, an adhesive layer of the tape provides a homogenous surface for marking subsequent to exposure to electromagnetic radiation.

Claims

1. A method of marking a packaged semiconductor device comprising:

providing a semiconductor die having a reduced cross-section in wafer form;

packaging said semiconductor die forming a packaged semiconductor device, said packaged semiconductor device having a surface;

applying a tape having optical energy-markable properties to at least a portion of said surface of said packaged semiconductor device;

subsequently exposing at least a portion of said tape to optical energy; and

forming a mark.

2. The method of claim 1, wherein said packaged semiconductor device comprises at least one integrated circuit semiconductor die.

3. The method of claim 1, wherein said applying a tape to at least a portion of said surface of said packaged semiconductor device includes applying said tape to an edge portion of said packaged semiconductor device.

4. The method of claim 3, wherein said exposing at least a portion of said tape to optical energy includes exposing said tape on said edge portion of said packaged semiconductor device.

5. The method of claim 1, wherein said optical energy-markable properties of said tape are embedded within said tape.

6. The method of claim 1, wherein said optical energy-markable properties of said tape comprise properties of at least one adhesive layer affixed to said tape.

7. The method of claim 6, wherein said at least one adhesive layer is selected from one of thiolene, poly-paraxylylene (Paralene), urethanes, silicones, epoxies, acrylics, or combinations of any thereof.

8. The method of claim 6, wherein said at least one adhesive layer is UV-sensitive.

9. The method of claim 6, wherein said at least one adhesive layer includes a multilayer adhesive having a first outermost layer comprising a mixture of electromagnetic radiation-curable components and a second layer disposed between said tape and said first outermost layer.

10. The method of claim 1, further comprising:

applying a second tape over at least a portion of a surface of said tape; and

exposing at least a portion of said second tape.

11. The method of claim 10, wherein said second tape is a carrier tape.

12. The method of claim 11, wherein said carrier tape includes a carrier tape having translucent properties.

13. The method of claim 11, wherein said second tape includes a tape having optical energy-markable properties.

14. The method of claim 1, wherein said tape comprises polytetrafluoroethylene tape.

15. The method of claim 1, wherein said exposing at least a portion of said tape to optical energy comprises exposing said at least a portion of said tape to one of an Nd:

YAG laser (yttrium aluminum garnet), an Nd;

YLP laser (pulsed ytterbium fiber), or carbon dioxide laser.

16. The method of claim 1, wherein said exposing at least a portion of said tape to optical energy includes exposing said at least a portion of said tape to an ultraviolet light source.

17. The method of claim 16, wherein said tape is comprised of a UV-penetrable polyvinyl chloride tape with an acrylic UV-sensitive adhesive disposed thereon.

18. The method of claim 1, wherein said tape includes a tape having antistatic capacities.

19. The method of claim 1, wherein said tape includes a tape of a thermally dissipating material.

20. The method of claim 1, wherein said tape includes a tape having a coefficient of thermal expansion substantially similar to that of said packaged semiconductor device.

21. The method of claim 1, wherein said forming said mark includes one of heating, chemically reacting, or transferring materials comprising said tape.

22. A method of marking a packaged semiconductor device having a semiconductor die comprising:

providing said semiconductor die in wafer form;

packaging said semiconductor die forming a packaged semiconductor device, said packaged semiconductor device having a surface;

applying a tape having optical energy-markable properties to at least a portion of said surface of said packaged semiconductor device;

subsequently exposing at least a portion of said tape to optical energy; and

forming a mark.

23. The method of claim 22, wherein said packaged semiconductor device comprises at least one integrated circuit semiconductor die.

24. The method of claim 22, wherein said applying a tape to at least a portion of a surface of said packaged semiconductor device includes applying said tape to an edge portion of said packaged semiconductor device.

25. The method of claim 24, wherein said exposing at least a portion of said tape to optical energy includes exposing said tape on said edge portion of said packaged semiconductor device.

26. The method of claim 22, wherein said optical energy-markable properties of said tape are embedded within said tape.

27. The method of claim 22, wherein said optical energy-markable properties of said tape comprise properties of at least one adhesive layer affixed to said tape.

28. The method of claim 27, wherein said at least one adhesive layer is selected from one of thiolene, poly-paraxylylene (Paralene), urethanes, silicones, epoxies, acrylics, or combinations of any thereof.

29. The method of claim 27, wherein said at least one adhesive layer is UV-sensitive.

30. The method of claim 27, wherein said at least one adhesive layer includes a multilayer adhesive having a first outermost layer comprising a mixture of electromagnetic radiation-curable components and a second layer disposed between said tape and said first outermost layer.

31. The method of claim 22, further comprising:

applying a second tape over at least a portion of a surface of said tape; and

exposing at least a portion of said second tape.

32. The method of claim 31, wherein said second tape is a carrier tape.

33. The method of claim 32, wherein said carrier tape includes a carrier tape having translucent properties.

34. The method of claim 32, wherein said second tape includes a tape having optical energy-markable properties.

35. The method of claim 22, wherein said tape comprises polytetrafluoroethylene tape.

36. The method of claim 22, wherein said exposing at least a portion of said tape to optical energy comprises exposing said at least a portion of said tape to one of an Nd:

YAG laser (yttrium aluminum garnet), an Nd;

YLP laser (pulsed ytterbium fiber), or carbon dioxide laser.

37. The method of claim 22, wherein said exposing at least a portion of said tape to optical energy includes exposing said at least a portion of said tape to an ultraviolet light source.

38. The method of claim 37, wherein said tape is comprised of a UV-penetrable polyvinyl chloride tape with an acrylic UV-sensitive adhesive disposed thereon.

39. The method of claim 22, wherein said tape includes a tape having antistatic capacities.

40. The method of claim 22, wherein said tape includes a tape of a thermally dissipating material.

41. The method of claim 22, wherein said tape includes a tape having a coefficient of thermal expansion substantially similar to that of said packaged semiconductor device.

42. The method of claim 22, wherein said forming said mark includes at least one of heating, chemically reacting, or transferring materials comprising said tape.

43. A method of marking a semiconductor die comprising:

providing a semiconductor die having a reduced cross-section in wafer form;

packaging said semiconductor die forming a packaged semiconductor device, said packaged semiconductor device having a surface;

applying a tape having optical energy-markable properties to at least a portion of said surface of said packaged semiconductor device;

subsequently exposing at least a portion of said tape to optical energy; and

forming a mark.

44. The method of claim 43, wherein said semiconductor die comprises at least one integrated circuit semiconductor die.

45. The method of claim 43, wherein said applying a tape to at least a portion of a surface of said semiconductor die includes applying said tape to an edge portion of said semiconductor die.

46. The method of claim 45, wherein said exposing at least a portion of said tape to optical energy includes exposing said tape on said edge portion of said semiconductor die.

47. The method of claim 43, wherein said optical energy-markable properties of said tape are embedded within said tape.

48. The method of claim 43, wherein said optical energy-markable properties of said tape comprise properties of at least one adhesive layer affixed to said tape.

49. The method of claim 48, wherein said at least one adhesive layer is selected from one of thiolene, poly-paraxylylene (Paralene), urethanes, silicones, epoxies, acrylics, or combinations of any thereof.

50. The method of claim 48, wherein said at least one adhesive layer is UV-sensitive.

51. The method of claim 48, wherein said at least one adhesive layer includes a multilayer adhesive having a first outermost layer comprising a mixture of electromagnetic radiation-curable components and a second layer disposed between said tape and said first outermost layer.

52. The method of claim 43, further comprising:

applying a second tape over at least a portion of a surface of said tape; and

exposing at least a portion of said second tape.

53. The method of claim 52, wherein said second tape is a carrier tape.

54. The method of claim 53, wherein said carrier tape includes a carrier tape having translucent properties.

55. The method of claim 53, wherein said second tape includes a tape having optical energy-markable properties.

56. The method of claim 43, wherein said tape comprises polytetrafluoroethylene tape.

57. The method of claim 43, wherein said exposing at least a portion of said tape to optical energy comprises exposing said at least a portion of said tape to one of an Nd:

YAG laser (yttrium aluminum garnet), an Nd;

YLP laser (pulsed ytterbium fiber), or carbon dioxide laser.

58. The method of claim 43, wherein said exposing at least a portion of said tape to optical energy includes exposing said at least a portion of said tape to an ultraviolet light source.

59. The method of claim 58, wherein said tape is comprised of a UV-penetrable polyvinyl chloride tape with an acrylic UV-sensitive adhesive disposed thereon.

60. The method of claim 43, wherein said tape includes a tape having antistatic capacities.

61. The method of claim 43, wherein said tape includes a tape of a thermally dissipating material.

62. The method of claim 43, wherein said tape includes a tape having a coefficient of thermal expansion substantially similar to that of said packaged semiconductor device.

63. The method of claim 43, wherein said forming said mark includes one of heating, chemically reacting, or transferring materials comprising said tape.

64. A method of marking a semiconductor die after a thinning process for reducing a thickness of said semiconductor die, said semiconductor die having an active surface and a thinned surface, said method comprising:

providing said semiconductor die in wafer form;

applying a tape having optical energy-markable properties to at least a portion of said thinned surface of said semiconductor die;

subsequently exposing at least a portion of said tape to optical energy; and

forming a mark on a portion of said semiconductor die.

65. The method of claim 64, wherein said semiconductor die comprises at least one integrated circuit semiconductor die.

66. The method of claim 64, wherein said applying a tape to at least a portion of said thinned surface of said semiconductor die includes applying said tape to an edge portion of said semiconductor die.

67. The method of claim 66, wherein said exposing at least a portion of said tape to optical energy includes exposing said tape on said edge portion of said semiconductor die.

68. The method of claim 64, wherein said optical energy-markable properties of said tape are embedded within said tape.

69. The method of claim 64, wherein said optical energy-markable properties of said tape comprise properties of at least one adhesive layer affixed to said tape.

70. The method of claim 69, wherein said at least one adhesive layer is selected from one of thiolene, poly-paraxylylene (Paralene), urethanes, silicones, epoxies, acrylics, or combinations of any thereof.

71. The method of claim 69, wherein said at least one adhesive layer is UV-sensitive.

72. The method of claim 69, wherein said at least one adhesive layer includes a multilayer adhesive having a first outermost layer comprising a mixture of electromagnetic radiation-curable components and a second layer disposed between said tape and said first outermost layer.

73. The method of claim 64, further comprising:

applying a second tape over at least a portion of a surface of said tape; and

exposing at least a portion of said second tape.

74. The method of claim 73, wherein said second tape is a carrier tape.

75. The method of claim 74, wherein said carrier tape includes a carrier tape having translucent properties.

76. The method of claim 74, wherein said second tape includes a tape having optical energy-markable properties.

77. The method of claim 64, wherein said tape comprises polytetrafluoroethylene tape.

78. The method of claim 64, wherein said exposing at least a portion of said tape to optical energy comprises exposing said at least a portion of said tape to one of an Nd:

YAG laser (yttrium aluminum garnet), an Nd;

YLP laser (pulsed ytterbium fiber), or carbon dioxide laser.

79. The method of claim 64, wherein said exposing at least a portion of said tape to optical energy includes exposing said at least a portion of said tape to an ultraviolet light source.

80. The method of claim 79, wherein said tape is comprised of a UV-penetrable polyvinyl chloride tape with an acrylic UV-sensitive adhesive disposed thereon.

81. The method of claim 64, wherein said tape includes a tape having antistatic capacities.

82. The method of claim 64, wherein said tape includes a tape of a thermally dissipating material.

83. The method of claim 64, wherein said tape includes a tape having a coefficient of thermal expansion substantially similar to that of said packaged semiconductor device.

84. The method of claim 64, wherein said forming said mark includes one of heating, chemically reacting, or transferring materials comprising said tape.

85. A method of marking a packaged semiconductor device comprising:

providing a semiconductor die having a reduced cross-section in sliced wafer form;

packaging said semiconductor die forming a packaged semiconductor device, said packaged semiconductor device having a surface;

applying a tape having optical energy-markable properties to at least a portion of said surface of said packaged semiconductor device;

subsequently exposing at least a portion of said tape to optical energy; and

forming a mark.

86. A method of marking a packaged semiconductor device having a semiconductor die comprising:

providing said semiconductor die in sliced wafer form;

packaging said semiconductor die forming a packaged semiconductor device, said packaged semiconductor device having a surface;

applying a tape having optical energy-markable properties to at least a portion of said surface of said packaged semiconductor device;

subsequently exposing at least a portion of said tape to optical energy; and

forming a mark.

87. A method of marking a semiconductor die comprising:

providing a semiconductor die having a reduced cross-section in sliced wafer form;

packaging said semiconductor die forming a packaged semiconductor device, said packaged semiconductor device having a surface;

applying a tape having optical energy-markable properties to at least a portion of said surface of said packaged semiconductor device;

subsequently exposing at least a portion of said tape to optical energy; and

forming a mark.

88. A method of marking a semiconductor die after a thinning process for reducing a thickness of said semiconductor die, said semiconductor die having an active surface and a thinned surface, said method comprising:

providing said semiconductor die in sliced wafer form;

applying a tape having optical energy-markable properties to at least a portion of said thinned surface of said semiconductor die;

subsequently exposing at least a portion of said tape to optical energy; and

forming a mark on a portion of said semiconductor die.

89. A method of marking a packaged semiconductor device comprising:

providing a semiconductor die having a reduced cross-section as a portion of a wafer;

packaging said semiconductor die forming a packaged semiconductor device, said packaged semiconductor device having a surface;

applying a tape having optical energy-markable properties to at least a portion of said surface of said packaged semiconductor device;

subsequently exposing at least a portion of said tape to optical energy; and

forming a mark.

90. A method of marking a packaged semiconductor device having a semiconductor die comprising:

providing said semiconductor die as apportion of a wafer;

packaging said semiconductor die forming a packaged semiconductor device, said packaged semiconductor device having a surface;

applying a tape having optical energy-markable properties to at least a portion of said surface of said packaged semiconductor device;

subsequently exposing at least a portion of said tape to optical energy; and

forming a mark.

91. A method of marking a semiconductor die comprising:

providing a semiconductor die having a reduced cross-section as a portion of a wafer;

packaging said semiconductor die forming a packaged semiconductor device, said packaged semiconductor device having a surface;

applying a tape having optical energy-markable properties to at least a portion of said surface of said packaged semiconductor device;

subsequently exposing at least a portion of said tape to optical energy; and

forming a mark.

92. A method of marking a semiconductor die after a thinning process for reducing a thickness of said semiconductor die, said semiconductor die having an active surface and a thinned surface, said method comprising:

providing said semiconductor die as a portion of a wafer;

applying a tape having optical energy-markable properties to at least a portion of said thinned surface of said semiconductor die;

subsequently exposing at least a portion of said tape to optical energy; and

forming a mark on a portion of said semiconductor die.

93. A method of marking a packaged semiconductor device comprising:

providing a semiconductor die having a reduced cross-section as a portion of a sliced wafer;

packaging said semiconductor die forming a packaged semiconductor device, said packaged semiconductor device having a surface;

applying a tape having optical energy-markable properties to at least a portion of said surface of said packaged semiconductor device;

subsequently exposing at least a portion of said tape to optical energy; and

forming a mark.

94. A method of marking a packaged semiconductor device having a semiconductor die comprising:

providing said semiconductor die as a portion of a sliced wafer;

packaging said semiconductor die forming a packaged semiconductor device, said packaged semiconductor device having a surface;

applying a tape having optical energy-markable properties to at least a portion of said surface of said packaged semiconductor device;

subsequently exposing at least a portion of said tape to optical energy; and

forming a mark.

95. A method of marking a semiconductor die comprising:

providing a semiconductor die having a reduced cross-section as a portion of a sliced wafer;

packaging said semiconductor die forming a packaged semiconductor device, said packaged semiconductor device having a surface;

applying a tape having optical energy-markable properties to at least a portion of said surface of said packaged semiconductor device;

subsequently exposing at least a portion of said tape to optical energy; and

forming a mark.

96. A method of marking a semiconductor die after a thinning process for reducing a thickness of said semiconductor die, said semiconductor die having an active surface and a thinned surface, said method comprising:

providing said semiconductor die as a portion of a sliced wafer;

applying a tape having optical energy-markable properties to at least a portion of said thinned surface of said semiconductor die;

subsequently exposing at least a portion of said tape to optical energy; and

forming a mark on a portion of said semiconductor die.