Method for forming conductive wires of semiconductor device
First Claim
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1. A method for forming a conductive wire of a semiconductor device, comprising:
- etching a lower portion of a side wall of a silicon layer pattern based on a difference of etching selectivities between a silicon layer and a lower film; and
forming a T-shaped conductive wire based on the silicon layer pattern.
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Abstract
A method is provided for forming a conductive wire of a semiconductor device using, for example, a damascene process. A conductive wire, such as a metal wire, is formed, based on a notching phenomenon which occurs when the etching selectivity between a polycrystalline silicon layer and a lower film is approximately 5 to 500:1.
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Citations
14 Claims
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1. A method for forming a conductive wire of a semiconductor device, comprising:
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etching a lower portion of a side wall of a silicon layer pattern based on a difference of etching selectivities between a silicon layer and a lower film; and
forming a T-shaped conductive wire based on the silicon layer pattern. - View Dependent Claims (2)
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3. A method for forming conductive wires of a semiconductor device, comprising the steps of:
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forming a first interlayer insulating film on a semiconductor substrate having a lower metal wire;
forming a diffusion barrier layer over the resulting structure;
forming a sacrificial conductive layer on the diffusion barrier layer;
forming a T-shaped sacrificial conductive layer pattern based on a photolithography process using an upper metal wire mask to etch a lower portion of a side wall of a sacrificial conductive layer by utilizing a notching phenomenon;
forming a planarized second interlayer insulating film exposing the sacrificial conductive layer on the entire surface, the second interlayer dielectric film filling an under-cut of the T-shaped sacrificial conductive layer pattern;
removing the sacrificial conductive layer pattern by etching an exposed portion of the diffusion barrier layer to simultaneously form a via contact hole and a trench exposing the lower metal wiring; and
forming an upper metal wire connected to the lower metal wire by filling the via contact hole and the trench. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification