Power semiconductor module

• US 20040164388A1
• Filed: 02/27/2004
• Published: 08/26/2004
• Est. Priority Date: 09/01/2001
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Stolze, Thilo
• Granted Patent: US 8,227,913 B2
• Time in Patent Office: Days
• US Class Current: 257/678
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01032 Germanium [Ge]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01075 Rhenium [Re]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/15787 Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/16152 : Cap comprising a cavity for hosting the device, e.g. U-shaped cap
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

The power semiconductor module (1) comprises several semiconductor components (6, 7, 8), located on a substrate (2). The aim of the invention is to prevent a reduction in the pressure of the substrate against a cooling surface and the resulting loss of cooling arising from deformations. Said aim is achieved, whereby the substrate (2) comprises several substrate regions (3, 4, 5), with one or several connection regions (31, 32), located between substrate regions (3, 4, 5), by means of which the substrate regions (3, 4, 5) are connected such as to move relative to each other.

Claims

1. A power semiconductor module comprising a plurality of semiconductor components situated on a substrate, wherein

the substrate has a plurality of substrate regions and

one or a plurality of connecting regions are situated between substrate regions, via which connecting regions the substrate regions are connected such that they can move relative to one another.

2. The power semiconductor module as claimed in claim 1, wherein

the connecting regions are formed by recesses in the material of the substrate.

3. The power semiconductor module as claimed in claim 2, wherein

the material recesses are slotted.

4. The power semiconductor module as claimed in claim 1, wherein

the substrate is a ceramic.

5. The power semiconductor module as claimed in claim 2, wherein

the substrate is a ceramic.

6. The power semiconductor module as claimed in claim 3, wherein

the substrate is a ceramic.

7. The power semiconductor module as claimed in claim 1, wherein

the housing, at least in the regions of the substrate regions, is such that it acts on the substrate regions with a spring force.

8. The power semiconductor module as claimed in claim 2, wherein

the housing, at least in the regions of the substrate regions, is such that it acts on the substrate regions with a spring force.

9. The power semiconductor module as claimed in claim 3, wherein

the housing, at least in the regions of the substrate regions, is such that it acts on the substrate regions with a spring force.

10. The power semiconductor module as claimed in claim 4, wherein

the housing, at least in the regions of the substrate regions, is such that it acts on the substrate regions with a spring force.

11. The power semiconductor module as claimed in claim 5, wherein

the housing, at least in the regions of the substrate regions, is such that it acts on the substrate regions with a spring force.

12. The power semiconductor module as claimed in claim 6, wherein

the housing, at least in the regions of the substrate regions, is such that it acts on the substrate regions with a spring force.

13. The power semiconductor module as claimed in claim 1, wherein

the power semiconductor module has a housing, which, in the region between the substrate regions, has action points for a mechanical pressure application of the connecting regions, and

the housing applies pressure to the individual substrate regions.