Organic light emitting diode

• US 20040164671A1
• Filed: 02/25/2004
• Published: 08/26/2004
• Est. Priority Date: 02/25/2003
• Status: Abandoned Application

• Current Assignee: UDC Ireland Limited
• Original Assignee: Fuji Photo Film Co Limited (Fujifilm Holdings Corporation)
• Inventors: Noguchi, Takafumi
• Application Number:
  US10/784,966
• Publication Number:
  US 20040164671A1
• Time in Patent Office: Days
• US Class Current: 313/504
• CPC Class Codes: H10K 2102/351 Thickness
• CPC Class Codes: H10K 50/125 specially adapted for multicolour light emission, e.g. for emitting white light
• CPC Class Codes: H10K 50/85 Arrangements for extracting light from the devices
• CPC Class Codes: H10K 59/875 Arrangements for extracting light from the devices

Abstract

An organic light emitting diode comprising: a substrate; a transparent electrode; at least two organic layers including a light emitting layer and an electron transporting layer: and a back electrode, wherein a thickness of the electron transporting layer is 60 nm or greater, and a total thickness of the electron transporting layer and the light emitting layer is 90 nm or smaller.

Claims

1. An organic light emitting diode comprising:

a substrate;

a transparent electrode;

at least two organic layers including a light emitting layer and an electron transporting layer; and

a back electrode,

wherein a thickness of the electron transporting layer is 60 nm or greater, and a total thickness of the electron transporting layer and the light emitting layer is 90 nm or smaller.

2. The organic light emitting diode according to claim 1, wherein the transparent electrode has a thickness of 50 to 210 nm.

3. The organic light emitting diode according to claim 1, wherein the transparent electrode has a thickness of 160 to 200 nm.

4. The organic light emitting diode according to claim 1, wherein a total thickness of the at least two organic layers is 90 to 300 nm.

5. The organic light emitting diode according to claim 2, wherein a total thickness of the at least two organic layers is 90 to 300 nm.

6. The organic light emitting diode according to claim 1, wherein a total thickness of the at least two organic layers is 150 to 250 nm.

7. The organic light emitting diode according to claim 1, wherein a total thickness of the transparent electrode and the at least two organic layers is 250 to 400 nm.

8. The organic light emitting diode according to claim 1, wherein a total thickness of the transparent electrode and the at least two organic layers is 300 to 350 nm.

9. The organic light emitting diode according to claim 1, wherein the thickness of the electron transporting layer is 70 to 80 nm.

10. The organic light emitting diode according to claim 1, wherein the total thickness of the electron transporting layer and the light emitting layer is 80 to 90 nm.

11. The organic light emitting diode according to claim 1, wherein a thickness of the light emitting layer is 10 to 20 nm.

12. The organic light emitting diode according to claim 1, which has at least two light emitting layers different in luminescence waveform in a side-by-side configuration.

13. The organic light emitting diode according to claim 2, which has at least two light emitting layers different in luminescence waveform in a side-by-side configuration.