Fabrication method for liquid crystal cell

• US 20040165131A1
• Filed: 02/21/2003
• Published: 08/26/2004
• Est. Priority Date: 02/21/2003
• Status: Active Grant

• Current Assignee: II-VI Delaware, Inc. (Coherent Corp.)
• Original Assignee: Xtellus Inc.
• Inventors: Cavanaugh, Shanti A., Palen, Edward, Anderson, Grady K., Hood, James M., Young, Mark E., Molinari, Louis J.
• Granted Patent: US 7,355,671 B2
• Time in Patent Office: Days
• US Class Current: 349/123
• CPC Class Codes: G02F 1/133351 Manufacturing of individual cells out of a plurality of cells, e.g. by dicing
• CPC Class Codes: G02F 1/133354 Arrangements for aligning or assembling substrates
• CPC Class Codes: G02F 1/1339 Gaskets; Spacers; Sealing of cells

Abstract

A liquid crystal cell fabrication method is presented that utilizes a deposited metal gasket moisture barrier bonding two opposing plates of glass each having a spacer layer to accurately control cell gap thickness along with an optional integrated thermal sensor and heater deposition layer sandwiched between both opposing plates of glass.

Claims

1. A method of fabricating a liquid crystal cell, comprising the steps of:

a) providing first and second substrate material,

b) depositing electrode layers on first and second substrates,

c) depositing alignment layers on first and second substrates,

d) anchoring the alignment layers,

e) depositing a spacer element on the first and second substrates, and

f) depositing a metal gasket element on the first and second substrates.

2. The method of claim 1, further including the steps:

g) aligning and pressing the wafers together

3. The method of claim 2 wherein step G is performmed using interlocking alignment features.

4. The method of claim 2, further including the steps:

h) dicing,

i) scoring the die to form a ledge,

j) removing the ledge from each die, and

k) filling the liquid crystal with liquid crystal material.

5. The method of claim 3, wherein the interlocking alignment features are deposited on each substrate in step E or F.