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Manufacturing method of semiconductor device

  • US 20040166637A1
  • Filed: 02/26/2004
  • Published: 08/26/2004
  • Est. Priority Date: 05/30/2000
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate having a principal surface of a first conductivity type;

    a second conductivity type region, having an island shape, formed on the principal surface of said semiconductor substrate by introducing impurities of a second conductivity type by a plurality of ion implantation steps so as to have a smooth concentration profile in a depth direction of the semiconductor substrate;

    a first conductivity type region formed inside said second conductivity type region by introducing impurities of the first conductivity type;

    a trench formed in the semiconductor substrate extending from a surface of said first conductivity type region so as to reach at least said second conductivity type region on said first semiconductor substrate;

    an insulation film formed on an inner wall surface of said trench; and

    an electrode portion made of polycrystalline silicon filled in said trench with said insulation film interposed therebetween.

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