Substrate table, production method therefor and plasma treating device

• US 20040168640A1
• Filed: 11/25/2003
• Published: 09/02/2004
• Est. Priority Date: 05/25/2001
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Muto, Shinji, Okayama, Nobuyuki, Taguchi, Chihiro
• Granted Patent: US 7,067,178 B2
• Time in Patent Office: Days
• US Class Current: 118/728
• CPC Class Codes: C23C 4/02 Pretreatment of the material to be coated, e.g. for coating on selected surface areas
• CPC Class Codes: C23C 4/18 After-treatment
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: H01L 21/68757 characterised by a coating or a hardness or a material
• CPC Class Codes: Y10T 279/23 with magnetic or electrostatic means

Abstract

The susceptor (10) of a plasma treating device, or the electrostatic chuck (12) of a substrate table is formed by ceramic thermal spray method. A ceramic spray layer (12A) is pore-sealed by methacrylic resin (12D). Resin raw material mainly containing methyl methacrylate is applied to and impregnated into the ceramic spray layer and then is cured to thereby fill pores between ceramic particles in the ceramic spray layer with methacrylic resin. Methacrylic resin raw material solution, which does not produce pores at curing, can complete perfect pore sealing.

Claims

1. A substrate table comprising:

a table main body; and

an electrostatic chuck layer arranged on the table main body, including an upper ceramic layer on which an object to be processed is mounted, a lower ceramic layer and an electrode layer disposed between the upper ceramic layer and the lower ceramic layer,

wherein the upper ceramic layer is formed by thermal spraying and pore-sealed by a methacrylic resin.

2. The substrate table of claim 1, wherein the methacrylic resin is obtained by curing a resin raw material containing methyl methacrylate as a main component thereof.

3. The substrate table of claim 1, wherein the upper ceramic layer is made of at least one of aluminum oxide, aluminum nitride, silicon nitride and titanium oxide.

4. A plasma processing apparatus comprising the substrate table of claim 1.

9. The substrate table of claim 1, wherein the upper ceramic layer has a surface flatness of Ra=0.2 to 0.3.

10. The substrate table of claim 1, wherein the upper ceramic layer has a thickness equal to or smaller than 250 μ

m.

11. The substrate table of claim 1, wherein the lower ceramic layer is pore-sealed by using a methacrylic resin.

12. The substrate table of claim 1, wherein a peripheral surface of the table main body is formed by thermal spraying and coated with a ceramic layer integrated as one body with the upper ceramic layer.

13. The substrate table of claim 12, wherein the ceramic layer of the peripheral surface of the table main body is pore-sealed by using a methacrylic resin.

5. A method for manufacturing a substrate table, comprising the steps of:

preparing a table main body;

forming on the table main body an electrostatic chuck layer made of a ceramic layer incorporating therein an electrode layer, the step of forming the electrostatic chuck layer including the step of forming the ceramic layer by thermally spraying a ceramic material while the table main body is heated.

8. The method of claim 5, wherein a gas channel for supplying a gas to a substrate is formed in the table main body and, at the step of forming the ceramic layer by thermal spraying, the thermal spraying is performed while ejecting a pressurized air from the gas channel, allowing a gas channel communicating with the gas channel in the table main body to be formed in the thermally sprayed ceramic layer.

14. The method of claim 5, further comprising the step of sealing pores existing in the ceramic layer by using a methacrylic resin, the step of sealing pores including the step of impregnating a resin raw material solution containing methyl methacrylate as a main component thereof into the ceramic layer and the step of curing the resin raw material solution.

15. The method of claim 14, wherein the step of curing the resin raw material solution is performed by a deaeration process.

16. The method of claim 15, wherein the deaeration process is performed at 0.1 torr or less.

6.

7.