Method of cleaning a surface of a material layer

• US 20040168705A1
• Filed: 03/04/2004
• Published: 09/02/2004
• Est. Priority Date: 07/25/2002
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Bodke, Ashish, Krishna, Nety M., Sun, Bingxi, Pung, David M.
• Application Number:
  US10/794,704
• Publication Number:
  US 20040168705A1
• Time in Patent Office: Days
• US Class Current: 134/1.2
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors

Abstract

A method for removing a reducible contaminant, such as an oxide or organic material, from a surface of a material layer comprises contacting an exposed dielectric layer with one or more suppressant species. The exposed dielectric layer and the material layer are contacted with the reducing species. Contacting the exposed dielectric layer with the suppressant species suppresses reactions between the exposed dielectric layer and the reducing species. Contacting the dielectric layer with the suppressant species may prevent the reducing gas from increasing the dielectric constant of the dielectric layer.

Claims

1. A method for removing contaminants from a substrate surface, comprising:

generating a plasma of a cleaning gas in a remote plasma source, the cleaning gas comprising water alone or in a mixture with one or more gases selected from the group consisting of nitrogen, hydrazine, ammonia, hydrogen, carbon monoxide, carbon dioxide, helium, and argon;

delivering radicals from the plasma of the cleaning gas to a process chamber that contains the substrate surface, wherein the substrate comprises copper; and

removing contaminants from the copper surface.

2. The method of claim 1, wherein the plasma comprises a mixture of water and hydrogen.

3. The method of claim 1, further comprising depositing a barrier layer on at least a portion of the cleaned copper surface.

4. The method of claim 1, wherein the remote plasma source is a microwave source or a radio frequency source.

5. The method of claim 1, wherein the plasma comprises a mixture of water and ammonia.

6. The method of claim 5, wherein the plasma further comprises argon or helium.

7. A method for removing copper oxides from a substrate surface, comprising:

generating a plasma of a cleaning gas in a remote plasma source, the cleaning gas comprising water alone or in a mixture with one or more gases selected from the group consisting of nitrogen, hydrazine, ammonia, hydrogen, carbon monoxide, carbon dioxide, helium, and argon;

delivering radicals from the plasma of the cleaning gas to a process chamber that contains the substrate surface comprising copper oxides; and

removing copper oxides from the substrate surface.

8. The method of claim 7, wherein the copper oxides are reduced by radicals from the plasma.

9. The method of claim 7, wherein the plasma comprises a mixture of water and hydrogen.

10. The method of claim 7, further comprising depositing a barrier layer on at least a portion of the cleaned copper surface.

11. The method of claim 7, wherein the remote plasma source is a microwave source or a radio frequency source.

12. The method of claim 7, wherein the plasma comprises a mixture of water and ammonia.

13. The method of claim 7, wherein the plasma further comprises argon or helium.

14. The method of claim 7, further comprising sputtering contaminants from the substrate surface prior to removing copper oxides from the substrate surface.

15. The method of claim 14, further comprising sputtering contaminants from the substrate surface after removing copper oxides from the substrate surface using a sputtering gas selected from the group consisting of helium, argon, neon, and combinations thereof.

16. A method for forming features on a substrate surface, comprising:

depositing a dielectric layer on a substrate surface;

etching features in the dielectric layer to expose a copper sublayer;

cleaning the features with radicals from a plasma of reactive gas, the reactive gas comprising water alone or in a mixture with one or more gases selected from the group consisting of nitrogen, hydrazine, ammonia, hydrogen, carbon monoxide, carbon dioxide, helium, and argon, wherein the plasma is generated by a remote plasma source and the radicals are delivered to a chamber which contains the substrate;

depositing a barrier layer at least partially within the feature;

cleaning the barrier layer with radicals from a plasma consisting of hydrogen, or a mixture of hydrogen, nitrogen, argon, and helium; and

filling the features with copper.

17. The method of claim 16, wherein the copper oxides are reduced by radicals from the plasma.

18. The method of claim 16, wherein the plasma comprises a mixture of water and hydrogen.

19. The method of claim 16, wherein the plasma comprises a mixture of water and ammonia.

20. The method of claim 16, wherein the remote plasma source is a microwave source or a radio frequency source.