Plasma processing equipment and plasma processing method

• US 20040168769A1
• Filed: 01/09/2004
• Published: 09/02/2004
• Est. Priority Date: 05/10/2002
• Status: Abandoned Application

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Matsuoka, Takaaki, Iwabuchi, Katsuhiko, Kawakami, Satoru
• Application Number:
  US10/483,185
• Publication Number:
  US 20040168769A1
• Time in Patent Office: Days
• US Class Current: 156/345.33
• CPC Class Codes: C23C 16/4404 Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
• CPC Class Codes: C23C 16/45568 Porous nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas
• CPC Class Codes: C23C 16/511 using microwave discharges
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/3185 of siliconnitrides

Abstract

A plasma processing apparatus, comprising: at least, a processing chamber for plasma-processing an object to be processed; gas supply means for supplying a gas into the processing chamber; and high-frequency supplying means for forming the gas into a plasma state. The gas supply means has at least one gas introduction pipe, and the tip of the gas introduction pipe is placed in a position in the processing chamber, which is capable of preferred control of the gas dissociation. There are provided a plasma processing apparatus and a plasma processing method which can improve the uniformity in the gas which has been supplied into the processing chamber.

Claims

1. A plasma processing apparatus, comprising:

at least,

a processing chamber for plasma-processing an object to be processed;

gas supply means for supplying a gas into the processing chamber; and

high-frequency supplying means for forming the gas into a plasma state;

wherein the gas supply means has at least one gas introduction pipe, the tip of the gas introduction pipe is placed in a position so that the tip is projected from the inner wall of the processing chamber facing the object to be processed, toward the interior of the processing chamber.

2. A plasma processing apparatus according to claim 1, wherein the position of the tip of the gas introduction pipe is within the diffusion plasma region of the plasma to be generated.

3. A plasma processing apparatus according to claim 1 or 2, wherein the position of the tip of the gas introduction pipe corresponds to the position providing a electron temperature of 1.6 ev or less.

4. A plasma processing apparatus according to any of claims 1-3, wherein the position of the tip of the gas introduction pipe corresponds to the position providing a plasma electron temperature which is 1.6 times or less the plasma electron temperature (Tes) to be used for the plasma processing of the object to be processed.

5. A plasma processing apparatus according to any of claims 1-4, wherein the position of the tip of the gas introduction pipe corresponds to the position exceeding the high frequency penetration length δ

of the plasma to be generated.

6. A plasma processing apparatus according to any of claims 1-5, wherein the tip of the gas introduction pipe is projected into the interior of the processing chamber so as to provide a projecting height of 5 mm or more.

7. A plasma processing apparatus according to any of claims 1-6, wherein a high frequency is supplied into the processing chamber from the high-frequency supplying means through a plane antenna member having a plurality of slots.

8. A plasma processing apparatus according to any of claims 1-7, wherein the high-frequency supplying means includes a coaxial tube, and the central conductor constituting the coaxial tube is the gas introduction pipe.

9. A plasma processing apparatus according to any of claims 1-8, wherein plural kinds of gases are supplied from the gas introduction pipe into the processing chamber.

10. A plasma processing apparatus according to claim 9, wherein the plural kinds of gases comprise a plasma excitation gas and a reactant gas for the plasma processing.

11. A plasma processing apparatus according to any of claims 1-10 wherein the gas is also supplied into the processing chamber from a peripheral portion of the processing chamber.

12. A plasma processing apparatus according to any of claims 1-11, wherein the projection height of the tip of the gas introduction pipe into the processing chamber is variable.

13. A plasma processing apparatus according to any of claims 1-12, wherein a flow channel member is disposed in at least one portion of the gas introduction pipe

14. A plasma processing method, wherein an object to be processed which is placed in a processing chamber is subjected to plasma processing by utilizing plasma based on a gas which has been supplied into the processing chamber;

the gas being supplied into the processing chamber from a gas introduction pipe;

the tip of the gas introduction pipe being projected from the inner wall of the processing chamber facing the object to be processed, toward the interior of the processing chamber.

15. A plasma processing method according to claim 14, wherein the plasma processing of the object to be processed is at least one selected from the group consisting of:

etching, film formation, cleaning for the object to be processed and/or processing chamber; and

ashing for the object to be processed.