Semiconductor pressure sensor device

• US 20040169190A1
• Filed: 02/18/2004
• Published: 09/02/2004
• Est. Priority Date: 02/27/2003
• Status: Abandoned Application

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Ueno, Masato, Watanabe, Yoshifumi
• Application Number:
  US10/779,658
• Publication Number:
  US 20040169190A1
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: G01L 19/0061 Electrical connection means
• CPC Class Codes: G01L 19/0069 from the sensor to its support
• CPC Class Codes: G01L 19/147 Details about the mounting of the sensor to support or covering means
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 23/057 the leads being parallel to the base
• CPC Class Codes: H01L 23/24 solid or gel at the normal operating temperature of the device H01L23/3135 takes precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01063 Europium [Eu]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/181 Encapsulation

Abstract

A semiconductor pressure sensor device has a fully-filling gel structure including a sensor chip for detecting a pressure and generating an electrical signal corresponding to the pressure. This sensor chip of the sensor device is connected with a conductive member such as a terminal using a bonding wire. The sensor chip and bonding wire are covered by a protective member that has characteristics of electric insulation and plasticity. Here, the bonding wire is formed of an alloy of Au and Pd. This structure using a bonding wire of an Au-Pd alloy enables wire strength to be enhanced without the wire diameter being largely increased in comparison with a conventional one.

Claims

1. A semiconductor pressure sensor device comprising:

a conductive member;

a sensor chip for detecting a pressure and generating an electrical signal corresponding to the pressure;

a bonding wire electrically connecting the sensor chip and the conductive member; and

a protective member having characteristics of electric insulation and plasticity and covering the sensor chip and the bonding wire,

wherein the bonding wire is formed of an alloy of Au and Pd.

2. The pressure sensor device of claim 1,

wherein a diameter of the bonding wire is not larger than 40 μ

m.

3. The pressure sensor device of claim 1, further comprising:

a circuit chip for processing the electrical signal from the sensor chip; and

an additional bonding wire electrically connecting the circuit chip and the sensor chip,

wherein the protective member covers the circuit sensor chip and the bonding wire, and

wherein the additional bonding wire is formed of an alloy of Au and Pd.

4. The pressure sensor device of claim 3,

wherein a diameter of the additional bonding wire is not larger than 40 μ

m.