Co-packaged control circuit, transistor and inverted diode

• US 20040169262A1
• Filed: 03/09/2004
• Published: 09/02/2004
• Est. Priority Date: 09/04/2002
• Status: Active Grant

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: International Rectifier Corporation (Infineon Technologies AG)
• Inventors: Oliver, Stephen, Richard, Hugh D.
• Granted Patent: US 6,975,023 B2
• Time in Patent Office: Days
• US Class Current: 257/676
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/26145 Flow barriers
• CPC Class Codes: H01L 2224/291 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48624 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48724 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83101 as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 2224/8319 Arrangement of the layer connectors prior to mounting
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49575 Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/0781 : being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

A copackaged electronic device comprises a diode device having an anode coupled to a drain electrode of a switching device and a cathode capable of being coupled to an external circuit. The switching device may be controlled by an integrated circuit mounted on a source electrode of the switching device and electrically connected such that the integrated circuit is capable of controlling switching of the switching device. For example, the device is used in a power factor correction circuit. The diode device comprises at least one inverted diode having a solderable anode and a wire-bondable cathode.

Claims

1. A copackaged device containing a plurality of electronic devices defining at least a portion of a circuit, and comprising:

a lead frame having a pad and a plurality of leads extending away from the pad, at least one of the plurality of leads being electrically connected to the pad, the pad having a mounting surface and a bottom surface opposite of the mounting surface, the mounting surface being electrically conductive;

a power switching device comprising a semiconductor die, a first electrode on a first surface of the die, and a second electrode and a third electrode on an opposite surface of the die, the first electrode being mounted and electrically connected to the mounting surface of the pad of the lead frame;

an integrated circuit having logic circuitry for controlling the power switching device, the integrated circuit being mounted on the opposite surface of the die of the power switching device and being operably electrically coupled to the power switching device such that the integrated circuit is capable of controlling the switching of the integrated circuit in response to signals received from the circuit;

a diode die having a cathode electrode on a first surface and an anode electrode on a second surface opposite of the first surface, wherein the cathode is wire bondable and the anode electrode is mounted and electrically connected to the mounting surface of the pad of the lead frame such that the diode die is laterally removed from the power switching device and is electrically coupled to the first electrode of the power switching device.

2. The device of claim 1, wherein the bottom surface of the pad of the lead frame is exposed, such that the bottom surface is configured to mount a heat sink operable for direct thermal heat transfer from the pad of the lead frame.

3. The device of claim 1, wherein the cathode electrode of the diode die is of an aluminum.

4. The device of claim 3, wherein the diode die includes a termination structure at least partially surrounding the anode electrode and the diode die has a passivation layer at least partially surrounding the anode, such that the passivation layer shields the termination structure of the diode die.

5. The device of claim 1, wherein the circuit is a power factor correction circuit.

6. The device of claim 2, wherein the circuit is a power factor correction circuit.

7. The device of claim 3, wherein the circuit is a power factor correction circuit.

8. The device of claim 4, wherein the circuit is a power factor correction circuit.

9. The device of claim 5, wherein the plurality of leads consists of five leads and the five leads extend from one edge of the pad and a first lead and a second lead of the five leads are wire bonded to contacts disposed on the opposite surface of the integrated circuit, a third lead of the five leads is integrally attached to the pad, the fourth lead is wire bonded to one of the second electrode and the third electrode of the power switching device and the fifth lead of the five leads is wire bonded to the cathode electrode of the diode die.

10. A tandem diode package for a power factor correction circuit, comprising:

an electrically conductive contact pad having a top surface and a bottom surface;

a first diode having a first anode and a first cathode opposite of the first anode, the first cathode being mounted and electrically connected to the top surface of the contact pad;

a second diode having a second cathode, a second anode opposite of the second cathode, the second anode being mounted and electrically connected to the top surface of the contact pad, a termination structure and a passivation layer surrounding the anode, the passivation layer protecting the termination structure, such that the termination structure of the second diode is electrically insulated from the contact pad.

11. The tandem diode package of claim 10, further comprising:

a lead frame, wherein the contact pad is mounted on the lead frame such that an insulating layer is sandwiched between the contact pad and the lead frame.

12. The diode package of claim 10, wherein contact pad is an integral portion of the lead frame.

13. The diode package of claim 12, wherein a bottom surface of the lead frame is exposed, such that the bottom surface of the lead frame is capable of thermal heat transfer to a heat sink.

14. A copackaged device for connection to an external circuit, comprising:

a lead frame having a pad and a plurality of leads extending in a direction away from the pad, at least one of the plurality of leads being electrically connected to the pad, the pad having a mounting surface and a bottom surface opposite of the mounting surface, the mounting surface being electrically conductive;

a power switching device comprising a semiconductor die, a first electrode on a first surface of the die, and a second electrode and a third electrode on an opposite surface of the die, the first electrode being mounted and electrically connected to the mounting surface of the pad of the lead frame;

an integrated circuit having logic circuitry for controlling the power switching device, the integrated circuit being mounted on the opposite surface of the die of the power switching device and being operably electrically coupled to the power switching device such that the integrated circuit is capable of controlling the switching of the integrated circuit in response to signals received from the external circuit; and

a diode package comprising a first diode die having a first anode and a first cathode, a second diode die having a second anode and a second cathode, and a diode contact pad mounted on the lead frame by an insulating layer, wherein the second anode is mounted on and electrically coupled to the diode contact pad and the first cathode is mounted on and electrically coupled to the diode contact pad such that the first diode and the second diode are mounted side by side and electrically connected in series by the diode contact pad, the first anode being electrically coupled to the first electrode of the power switching device and the second cathode being electrically coupled to one of the plurality of leads such that the integrated circuit, the power transformer and the diode package define a portion of an electrical circuit.

15. The device of claim 14, wherein the second anode is of a solderable aluminum and the second cathode is of a wire-bondable copper, wherein the second anode is coupled to the diode contact pad by a solder layer and second cathode is coupled to the one of the plurality of leads by at least one wire bond.

16. The device of claim 15, wherein the insulating layer is sandwiched between the lead frame and the diode contact pad such that no electrical contact is made between the diode contact pad and the lead frame.

17. The device of claim 16, wherein the insulating layer is mounted on the mounting surface of the lead frame.

18. The device of claim 16, wherein the insulating layer is mounted on the bottom surface of the lead frame.

19. The device of claim 15, wherein the mounting surface is electrically coupled by a wire bond to a pin contact pad of one of the plurality of leads and the first anode of the first diode is electrically coupled by another wire bond to a pin contact pad of one of the plurality of leads such that the power switching device is operably coupled to the first anode during operation of the device.

20. The device of claim 19, wherein the pin contact pad coupled to the first anode of the first diode is a different pin contact pad than the pin contact pad coupled to the mounting surface, such that the power switching device is operably coupled to the first anode of the first diode by the external circuit during operation of the device.