PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION APPARATUS AND METHOD FOR FORMING NITRIDE LAYER USING THE SAME
First Claim
1. A plasma enahnced CVD apparatus, comprising:
- a process chamber including an upper chamber with a dome shape, a lower chamber, and an insulator placed between the upper chamber and the lower chamber;
a gas distributing ring installed in the process chamber for ejecting a gas in an upward direction inside the process chamber;
a susceptor installed below the gas distributing ring for supporting a wafer thereon, and having a heater for controlling a temperature of the wafer and an internal temperature of the process chamber;
a plasma compensation ring installed at an upper part of sidewalls of the susceptor;
a vacuum pump connected to the process chamber; and
an electric power source connected to the upper chamber and the lower chamber.
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Abstract
A plasma enhanced chemical vapor deposition apparatus and a method of forming a nitride layer using the same, wherein the plasma enhanced CVD apparatus includes a process chamber including an upper chamber with a dome shape, a lower chamber, and an insulator therebetween, a gas distributing ring, a susceptor for supporting a wafer and heating the process chamber, a plasma compensation ring surrounding the susceptor, a vacuum pump and an electric power source connected to the process chamber. The gas distributing ring has a plurality of upwardly inclined nozzles, allowing upward distribution of reactive gases. The method of forming a nitride layer includes forming a protective film on inner walls of a process chamber, the protective film having at least two layers of differeing dielectric constant, and sequentially supplying reactive gases to the process chamber. A nitride layer formed thereby has low hydrogen content, good density and oxidation resistance.
19 Citations
18 Claims
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1. A plasma enahnced CVD apparatus, comprising:
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a process chamber including an upper chamber with a dome shape, a lower chamber, and an insulator placed between the upper chamber and the lower chamber;
a gas distributing ring installed in the process chamber for ejecting a gas in an upward direction inside the process chamber;
a susceptor installed below the gas distributing ring for supporting a wafer thereon, and having a heater for controlling a temperature of the wafer and an internal temperature of the process chamber;
a plasma compensation ring installed at an upper part of sidewalls of the susceptor;
a vacuum pump connected to the process chamber; and
an electric power source connected to the upper chamber and the lower chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of forming a nitride layer using a plasma enhanced CVD comprising:
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loading a wafer onto a susceptor;
supplying a first reactive gas containing nitrogen N2 to a process chamber;
leaving the wafer intact for a first dalay time;
forming a basic layer on the wafer by converting the first reactive gas into plasma which is created by applying electric power to the process chamber;
leaving the wafer intact for a second delay time;
forming a nitride layer on the wafer having the basic layer thereon by supplying a second reactive gas to the process chamber and converting the second reactive gas into plasma;
leaving the wafer intact for a third delay time;
stopping the supply of the first and second reactive gases to the process chamber;
leaving the wafer intact for a fourth dealy time;
stopping applying the electric power; and
unloading the wafer from the susceptor. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification