Trench power MOSFET with planarized gate bus
First Claim
1. A power MOSFET comprising:
- a substrate comprising a first trench and a second trench extending from a top surface of the substrate;
a source region, a channel region, and a drain region in the substrate and arranged vertically along at least a portion of a wall of the first trench;
a gate structure that extends continuously in the first and second trenches, wherein a top surface of the gate structure does not extend above the top surface of the substrate, a first portion of the gate structure acts as a gate of a vertical device in the wall of the first trench, and a second portion of the gate structure resides in the second trench; and
a gate contact that contacts the second portion of the gate structure.
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Accused Products
Abstract
Power MOSFETs and fabrication processes for power MOSFETs use a continuous conductive gate structure within trenches to avoid problems arising from device topology caused when a gate bus extends above a substrate surface. The conductive gate structure forms gates in device trenches in an active device region and forms a gate bus in a gate bus trench. The gate bus trench that connects to the device trenches can be wide to facilitate forming a gate contact to the gate bus, while the device trenches can be narrow to maximize device density. CMP process can be used to planarize the conductive gate structure and/or overlying insulating layers. The processes are compatible with processes forming self-aligned or conventional contacts in the active device region.
99 Citations
20 Claims
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1. A power MOSFET comprising:
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a substrate comprising a first trench and a second trench extending from a top surface of the substrate;
a source region, a channel region, and a drain region in the substrate and arranged vertically along at least a portion of a wall of the first trench;
a gate structure that extends continuously in the first and second trenches, wherein a top surface of the gate structure does not extend above the top surface of the substrate, a first portion of the gate structure acts as a gate of a vertical device in the wall of the first trench, and a second portion of the gate structure resides in the second trench; and
a gate contact that contacts the second portion of the gate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A fabrication process for a power MOSFET comprising:
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forming a first trench in a substrate;
forming a second trench in the substrate;
forming a conductive gate structure that extends continuously from the first trench into the second trench;
doping a mesa in the substrate adjacent the first trench to form a vertical device including a source region, a channel region, and a drain region that are vertically aligned along a wall of the first trench;
performing a chemical mechanical polishing (CMP) process on a structure including the conductive gate structure in the first and second trenches; and
depositing a contact layer after the CMP process, wherein the contact layer includes a first region contacting the device adjacent to the first trench and a second region overlying the second trench and contacting the conductive gate structure. - View Dependent Claims (12, 13, 16, 17, 18, 19)
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- 14. The fabrication process of claim 14, further comprising performing a contact etch that etches an opening through the insulating layer to expose a portion of the conductive gate structure in the second trench, the contact layer filling the opening and contacting the exposed portion of the gate structure in the second trench.
Specification