Structure of a light-incidence electrode of an optical interference display plate

• US 20040175577A1
• Filed: 09/26/2003
• Published: 09/09/2004
• Est. Priority Date: 03/05/2003
• Status: Abandoned Application

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Prime View International Company Limited (E Ink Holdings Incorporated)
• Inventors: Lin, Wen-Jian, Tsai, Hsiung-Kuang
• Application Number:
  US10/670,737
• Publication Number:
  US 20040175577A1
• Time in Patent Office: Days
• US Class Current: 428/432
• CPC Class Codes: C03C 17/3417 all coatings being oxide coatings
• CPC Class Codes: C03C 17/3435 comprising a nitride, oxynitride, boronitride or carbonitride
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

An optical interference display plate at least comprises a light-incidence electrode and a light-reflection electrode. The light-incidence electrode at least comprises an absorption layer and a dielectric layer. A material of the absorption layer does not comprises metallic material.

Claims

1. An optical interference display, at least comprising:

a conductive transparent layer; and

a dielectric layer located on the conductive transparent layer, wherein a incident light irradiate form a side of the conductive transparent layer, the material of the conductive transparent layer and a thickness of the conductive transparent layer absorb at least 30% of the incident light.

2. The optical interference display of claim 1, wherein a material of the conductive transparent layer is selected from the group consisting of ITO, IZO, ZO, IO and the combination thereof.

3. The optical interference display of claim 1, wherein a material of the dielectric layer comprises silicon oxide, silicon nitride or metal oxide.

4. The optical interference display of claim 1, wherein lattice of the conductive transparent layer is disordered.

5. The optical interference display of claim 1, wherein axes of every part of the conductive transparent layer are different.

6. The optical interference display of claim 1, wherein the conductive transparent layer further comprises more than 100 ppm impurity.

7. An optical interference display plate, at least comprising:

two conductive transparent layers; and

two dielectric layers, each of the dielectric layers located on each of the conductive transparent layers, wherein a incident light irradiate form a side of the conductive transparent layer, the material of the conductive transparent layer and a thickness of the conductive transparent layer absorb at least 30% of the incident light.

8. The optical interference display of claim 7, wherein a material of the conductive transparent layer is selected from the group consisting of ITO, IZO, ZO, IO and the combination thereof.

9. The optical interference display of claim 7, wherein a material of the dielectric layer comprises silicon oxide, silicon nitride or metal oxide.

10. The optical interference display of claim 7, wherein lattice of the conductive transparent layer is disordered.

11. The optical interference display of claim 7, wherein axes of every part of the conductive transparent layer are different.

12. The structure of claim 7, wherein the conductive transparent layer further comprises more than 100 ppm impurity.

13. An optical interference display plate, at least comprising:

a first conductive transparent layer;

a first dielectric layer located on the first conductive transparent layer;

a second conductive transparent layer located on the first dielectric layer;

a second dielectric layer located on the second conductive transparent layer;

a third conductive transparent layer located on the second dielectric layer; and

a third dielectric layer located on the third conductive transparent layer,

wherein a incident light irradiate form a side of the first conductive transparent layer, the material of the first conductive transparent layer, the second conductive transparent layer, the third conductive transparent layer and a thickness of the first conductive transparent layer, the second conductive transparent layer, the third conductive transparent layer absorb at least 30% of the incident light.

14. The optical interference display of claim 13, wherein a material of the first conductive transparent layer, the second conductive transparent layer and the third conductive transparent layer is selected from the group consisting of ITO, IZO, ZO, IO and the combination thereof.

15. The optical interference display of claim 13, wherein a material of the first dielectric layer, the second dielectric layer and the third dielectric layer comprises silicon oxide, silicon nitride or metal oxide.

16. The optical interference display of claim 13, wherein the lattice of the first conductive transparent layer and the second conductive transparent layer is different.

17. The optical interference display of claim 13, wherein the lattice of the second conductive transparent layer and the third conductive transparent layer is different.

18. The optical interference display of claim 13, wherein axis of the first conductive transparent layer and the second conductive transparent layer is different is different.

19. The optical interference display of claim 13, wherein axis of the second conductive transparent layer and the third conductive transparent layer is different is different.

20. The structure of claim 13, wherein the conductive transparent layers further comprises more than 100 ppm impurity.