Novel application of a supercritical CO2 system for curing low k dielectric materials
First Claim
1. A method of curing and modifying a low k dielectric layer on a substrate, comprising:
- (a) providing a substrate;
(b) coating a spin-on low k dielectric layer on said substrate;
(c) positioning said substrate in a process chamber; and
(d) treating said substrate with a supercritical fluid (SCF) comprised of CO2 and a co-solvent which is H2O2, CF3—
X, or Y—
F wherein X═
NR1R2, —
OR3, —
O2CR3, —
(C═
O)R3, or R3 and wherein Y═
H or an alkyl group and R1, R2, R3═
H or an alkyl group.
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Accused Products
Abstract
A method and apparatus for curing and-modifying a-low k dielectric layer in an interconnect structure is disclosed. A spin-on low k dielectric layer comprised of an organic silsesquioxane, polyarylether, bisbenzocyclobuene, or SiLK is spin coated on a substrate. The substrate is placed in a process chamber in a supercritical CO2 system and is treated at a temperature between 30° C. and 150° C. and at a pressure from 70 to 700 atmospheres. A co-solvent such as CF3—X or F—X is added that selectively replaces C—CH3 bonds with C—CF3 or C—F bonds. Alternatively, H2O2 is employed as co-solvent to replace a halogen in a C-Z bond where Z=F, Cl, or Br with an hydroxyl group. Two co-solvents may be combined with CO2 for more flexibility. The cured dielectric layer has improved properties that include better adhesion, lower k value, increased hardness, and a higher elastic modulus.
43 Citations
41 Claims
-
1. A method of curing and modifying a low k dielectric layer on a substrate, comprising:
-
(a) providing a substrate;
(b) coating a spin-on low k dielectric layer on said substrate;
(c) positioning said substrate in a process chamber; and
(d) treating said substrate with a supercritical fluid (SCF) comprised of CO2 and a co-solvent which is H2O2, CF3—
X, or Y—
F wherein X═
NR1R2, —
OR3, —
O2CR3, —
(C═
O)R3, or R3 and wherein Y═
H or an alkyl group and R1, R2, R3═
H or an alkyl group. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
-
-
15. A damascene process comprising the steps of:
-
(a) providing a substrate upon with an etch stop layer formed thereon;
(b) coating a spin-on low k dielectric layer on said etch stop layer;
(c) curing and modifying said low k dielectric layer by treating with a supercritical fluid comprised of CO2 and a co-solvent which is H2O2, CF3—
X, or Y—
F wherein X═
NR1R2, —
OR3, —
O2CR3, —
(C═
O)R3, or R3 and wherein Y═
H or an alkyl group and R1, R2, R3═
H or an alkyl group;
(d) forming an opening in the stack comprised of said low k dielectric layer and said etch stop layer;
(e) depositing a barrier metal liner in said opening;
(f) depositing a metal on said barrier metal liner to fill said opening; and
(g) planarizing said metal so that it is coplanar with said low k dielectric layer. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
-
-
34. An apparatus for curing and modifying a low k dielectric material on a substrate, comprising a continuous loop SCF system that can withstand pressures from about 70 to 700 atmospheres and temperatures of about 30°
- C. to 150°
C., comprising;
(a) a process chamber capable of holding a 300 mm wafer in place during a supercritical fluid (SCF) treatment;
(b) a port with a connection to an end point detection system;
(c) a separator for removing co-solvents, solids, monomers, O2, and N2 from the SCF;
(d) a hydrocarbon knock out chamber;
(e) a chiller;
(f) a working CO2 tank;
(g) a make up tank for CO2 and a source tank for a first co-solvent and a second source tank for a second co-solvent;
(h) a preheater for heating the SCF in the loop before entering the process chamber;
(i) a CO2 pump and pumps for introducing co-solvents into the continuous loop system;
(j) tubing and valves for directing, regulating, and containing the SCF flow within the continuous loop; and
(k) a supercritical fluid comprised of CO2 and one or more co-solvents selected from a group including H2O2, CF3—
X, or Y—
F wherein X═
NR1R2, —
OR3, —
O2CR3, —
(C═
O)R3, or R3 and wherein Y═
H or an alkyl group and R1, R2, R3═
H or an alkyl group. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41)
- C. to 150°
Specification