Surface/bulk micromachined single-crystalline silicon micro-gyroscope

• US 20040177689A1
• Filed: 12/18/2003
• Published: 09/16/2004
• Est. Priority Date: 07/13/2000
• Status: Active Grant

• Current Assignee: Barun Electronics Co., Ltd.
• Original Assignee: Seoul National University Industry Foundation (Seoul National University)
• Inventors: Cho, Dong-il
• Granted Patent: US 6,988,408 B2
• Time in Patent Office: Days
• US Class Current: 73/504.14
• CPC Class Codes: G01C 19/5719 using planar vibrating masses driven in a translation vibration along an axis

Abstract

A micromachined single-crystalline silicon micro-gyroscope comprising oxide/polysilicon/metal triple layer for electrical isolation is disclosed. The isolation method includes forming the triple layer composed of an insulation layer formed over an exposed surface of the silicon microstructure, a conductive layer formed over the entire insulation layer, and a metal layer formed over a top portion of the microstructure; and etching the conductive layer at the bottom to form electrical isolation between parts of the microstructure. The method does not require a separate photolithography process for isolation, and can be effectively applied to microstructures having high aspect ratios and narrow trenches.

Claims

1. A micromachined single-crystalline silicon micro-gyroscope, comprising:

a reference electrode, driving electrodes, driving sensing electrodes, and sensing electrodes which are fixed structures, and

an outer mass which is connected to the reference electrode via driving springs, and an inner mass which is connected to the outer mass via sensing springs, wherein the outer mass and the inner mass are movable structures, and are released and separated from the bottom surface of the micro-gyroscope by a certain predetermined distance,

wherein the outer mass and the inner mass are vibrated in the driving direction when voltage is applied to the driving electrodes, and if the angular rate is applied to the micro-gyroscope, the inner mass is vibrated in the direction perpendicular to the driving direction of the outer mass, and the sensing electrodes located in the inner mass detect the vibration of the inner mass, and thus the micro-gyroscope senses the angular rate;

wherein an insulation layer and a conductive layer are deposited on the surface of the micro-gyroscope,

a metal layer is further deposited on the top of the micro-gyroscope, and

the conductive layer is etched away at the bottom among the reference electrode, driving electrodes, driving sensing electrodes, and sensing electrodes so as to isolate these electrodes from each other.

2. The micro-gyroscope of claim 1, wherein the conductive layer is etched away at a portion of the bottom exposed to the top of the micro-gyroscope as the shape of the movable structure so as to isolate the reference electrode, the driving electrodes, the driving sensing electrodes, the sensing electrodes, and the combs of the movable structures from each other.

3. The micro-gyroscope of claim 1, wherein

each of the driving electrodes, the driving sensing electrodes, sensing electrodes, the outer mass, and the inner mass have comb structures,

the combs of the driving electrodes and some combs of the outer mass are interdigitated with each other so that the outer mass may vibrate due to the voltage applied to the driving electrodes,

other combs of the outer mass and the combs of the driving electrodes are interdigitated with each other so that the driving sensing electrodes may detect the vibration of the outer mass, and

the combs of the inner mass and the combs of the sensing electrodes are interdigitated with each other so that the sensing electrodes may detect the vibration of the inner mass.

4. The micro-gyroscope of claim 3, wherein the comb structures have high aspect ratio.

5. The micro-gyroscope of claim 1, wherein the conductive layer is composed of polysilicon.

6. The micro-gyroscope of claim 1, wherein the insulation layer is composed of silicon oxide.

7. The micro-gyroscope of claim 1, wherein the driving spring and the sensing spring are arranged with each other at a 90°

angle.

8. The micro-gyroscope of claim 7, wherein the vertical depth of both of the driving spring and the sensing spring is larger than 10 micrometer.

9. The micro-gyroscope of claim 7, wherein the substrate of the micro-gyroscope is made of silicon.

10. The micro-gyroscope of claim 1, wherein the metal layer is composed of aluminum, gold or titanium.

11. The micro-gyroscope of claim 1, wherein the height of a sacrificial gap formed between the movable structures and the bottom of the micro-gyroscope is not less than 10 micrometer.