Multi-color stacked semiconductor lasers

• US 20040179566A1
• Filed: 03/11/2003
• Published: 09/16/2004
• Est. Priority Date: 03/11/2003
• Status: Abandoned Application

• Current Assignee: Aharon El-Bahar
• Original Assignee: Aharon El-Bahar
• Inventors: El-Bahar, Aharon
• Application Number:
  US10/385,596
• Publication Number:
  US 20040179566A1
• Time in Patent Office: Days
• US Class Current: 372/45
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/48463 the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01S 2301/173 The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
• CPC Class Codes: H01S 5/0213 Sapphire, quartz or diamond based substrates
• CPC Class Codes: H01S 5/0234 Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
• CPC Class Codes: H01S 5/18305 with emission through the substrate, i.e. bottom emission
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18361 Structure of the reflectors, e.g. hybrid mirrors
• CPC Class Codes: H01S 5/18397 Plurality of active layers vertically stacked in a cavity for multi-wavelength emission
• CPC Class Codes: H01S 5/2009 by using electron barrier layers
• CPC Class Codes: H01S 5/305 characterised by the doping materials used in the laser structure
• CPC Class Codes: H01S 5/3054 p-doping
• CPC Class Codes: H01S 5/3086 doping of the active layer
• CPC Class Codes: H01S 5/34333 with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
• CPC Class Codes: H01S 5/4087 emitting more than one wavelength
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

A laser device includes a substrate and a multi-layer semiconductor structure formed on the substrate. The structure includes one or more active layers, which are adapted to amplify optical radiation at a plurality of different wavelengths, and at least two reflective regions, arranged to define at least one micro-cavity resonator containing the active layers and having an optical axis substantially perpendicular to the substrate. An electrode is coupled to apply an electrical current to the multi-layer semiconductor structure, causing the structure to emit laser radiation along the optical axis at the plurality of different wavelengths.

Claims

1. A laser device, comprising:

a substrate;

a multi-layer semiconductor structure formed on the substrate, the structure comprising;

one or more active layers, which are adapted to amplify optical radiation at a plurality of different wavelengths; and

at least two reflective regions, arranged to define at least one micro-cavity resonator containing the active layers and having an optical axis substantially perpendicular to the substrate; and

an electrode, which is coupled to apply an electrical current to the multi-layer semiconductor structure, causing the structure to emit laser radiation along the optical axis at the plurality of different wavelengths.

2. The device according to claim 1, wherein the one or more active layers comprise a plurality of active layers, each of which is adapted to amplify the optical radiation at a respective one of the different wavelengths.

3. The device according to claim 1, wherein the active layers comprise quantum wells having recombination energies that correspond to the different wavelengths.

4. The device according to claim 3, wherein the different wavelengths are determined by selecting at least one of a composition of the quantum wells and a thickness of the quantum wells so as to provide electron and hole energy levels having the recombination energies that correspond to the different wavelengths.

5. The device according to claim 1, wherein the plurality of different wavelengths comprises at least first and second wavelengths, and wherein the at least one micro-cavity resonator comprises a single resonator containing the active layers and having resonances at the first and second wavelengths.

6. The device according to claim 5, wherein the at least two reflective regions comprise first and second distributed Bragg reflectors (DBRs) containing the active layers therebetween, and wherein the DBRs are adapted to reflect the radiation at both the first and second wavelengths.

7. The device according to claim 6, wherein each of the DBRs comprises a stack of alternating DBR layers, each having a respective dielectric index n and a respective thickness t that is chosen so as to satisfy

8. The device according to claim 1, wherein the one or more active layers comprise first and second active layers, which are adapted to amplify the optical radiation at respective first and second wavelengths, and

wherein the at least one micro-cavity resonator comprises first and second resonators, coaxially aligned along the optical axis and containing the first and second active layers, respectively.

9. The device according to claim 8, wherein the device has first and second sides and is arranged so that the laser radiation is emitted through the first side of the device, and wherein the first resonator is located between the second resonator and the first side of the device, and

wherein the at least two reflective regions comprise:

first and second reflectors, containing the first active layer therebetween, wherein the first and second reflectors are substantially reflective at the first wavelength and substantially transparent at the second wavelength; and

third and fourth reflectors, containing the second active layer therebetween, wherein the third and fourth reflectors are substantially reflective at the second wavelength.

10. The device according to claim 8, wherein the at least two reflective regions comprise first, second and third reflective regions, such that the first and second reflective regions contain the first active layer therebetween and define the first resonator, while the second and third reflective regions contain the second active layer therebetween and define the second resonator.

11. The device according to claim 1, wherein the different wavelengths are selected and an intensity of the radiation emitted at each of the different wavelengths is controlled so that the laser radiation is perceived as white light.

12. A light source, comprising:

a substrate;

an array of vertical-cavity surface-emitting laser (VCSEL) structures formed on the substrate, each such VCSEL structure comprising one or more active layers, which are adapted to amplify optical radiation at a plurality of different wavelengths, the array further comprising at least two reflective regions, which are arranged to define, in each of the VCSEL structures, at least one micro-cavity resonator containing the active layer and having a respective optical axis passing through the VCSEL structure in a direction substantially perpendicular to the substrate; and

electrodes, which are coupled to apply an electrical current to the VCSEL structures, causing each of the VCSEL structures to emit laser radiation along the respective optical axis at the plurality of different wavelengths.

13. The light source according to claim 12, and comprising an integrated circuit chip having pads, to which the electrodes are fixed so as to mount the array of VCSEL structures on the chip and to supply the electrical current through the pads to the electrodes.

14. The light source according to claim 12, wherein the different wavelengths are selected and an intensity of the radiation emitted at each of the different wavelengths is controlled so that the laser radiation is perceived as white light.

15. A method for producing a light source, comprising:

forming a multi-layer semiconductor structure on a substrate, the structure comprising one or more active layers for amplifying optical radiation at a plurality of different wavelengths, and at least two reflective regions, arranged to define at least one micro-cavity resonator containing the active layers and having an optical axis substantially perpendicular to the substrate; and

coupling an electrode to apply an electrical current to the multi-layer semiconductor structure, so as to cause the structure to emit laser radiation along the optical axis at the plurality of different wavelengths.

16. The method according to claim 15, wherein forming the multi-layer semiconductor structure comprises forming a plurality of active layers, each of which is adapted to amplify the optical radiation at a respective one of the different wavelengths.

17. The method according to claim 15, wherein forming the multi-layer semiconductor structure comprises forming quantum wells in the active layers having recombination energies that correspond to the different wavelengths.

18. The method according to claim 15, wherein the plurality of different wavelengths comprises at least first and second wavelengths, and wherein forming the multi-layer semiconductor structure comprises forming a single resonator containing the active layers and having resonances at the first and second wavelengths.

19. The method according to claim 15, wherein forming the multi-layer semiconductor structure comprises forming first and second active layers, which are adapted to amplify the optical radiation at respective first and second wavelengths, and forming first and second resonators, coaxially aligned along the optical axis and containing the first and second active layers, respectively.

20. The method according to claim 15, wherein forming the multi-layer semiconductor structure comprises selecting the different wavelengths and determining an intensity of the radiation to be emitted at each of the different wavelengths so that the laser radiation is perceived as white light.

21. The method according to claim 15, wherein forming the multi-layer semiconductor structure comprises forming an array of vertical-cavity surface-emitting laser (VCSEL) structures.