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Sputtering target, transparent conductive film, and their manufacturing method

  • US 20040180217A1
  • Filed: 01/30/2004
  • Published: 09/16/2004
  • Est. Priority Date: 08/02/2001
  • Status: Abandoned Application
First Claim
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1. A sputtering target, comprising indium oxide and tin oxide, the content by percentage of the tin atoms therein being from 3 to 20 atomic % of the total of the indium atoms and the tin atoms, and the maximum grain size of indium oxide crystal in the sputtering target being 5 μ

  • m or less.

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