Backside thinning of image array devices
First Claim
1. The method of reducing image artifact in an electron bombarded active pixel array device comprising the steps of converting an optical image to a photoelectron flux distribution, accelerating said flux distribution toward an active pixel sensor array to interact therewith, interposing an array of collimators to constrain said photoelectron flux through a single collimator to parallel trajectories for normal incidence on at least one corresponding pixel.
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Abstract
Backthinning in an area selective manner is applied to imaging sensors 12 for use in electron bombarded devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels providing improved image contrast of such image sensor. Provision of a thin P-doped layer 52 on the illuminated rear surface provides both a diffusion barrier resulting in improved resolution and a functional shield for reference pixels. A gradient in concentration of P-doped layer 52 optimizes electron collection at the pixel array.
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Citations
5 Claims
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1. The method of reducing image artifact in an electron bombarded active pixel array device comprising the steps of
converting an optical image to a photoelectron flux distribution, accelerating said flux distribution toward an active pixel sensor array to interact therewith, interposing an array of collimators to constrain said photoelectron flux through a single collimator to parallel trajectories for normal incidence on at least one corresponding pixel.
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4. The method of sensing an image projected on the rear surface of a back illuminated semiconductor pixel array, comprising
forming a P-doped layer of selected thickness on said rear surface to achieve a desired conductivity therein, whereby a conduction band potential barrier is created, preparing a flux distribution of electrons corresponding to said image, accelerating said electrons to a selected energy, intercepting said electrons on said P-doped layer of semiconductor, generating entirely within said P-doped layer a plurality of electron-hole pairs for each said selected energy electron, collecting said generated electrons at pixels correspondingly proximate each said generated electron-hole pair, whereby said pixel array contains information comprising said image.
Specification