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METHOD TO FILL DEEP TRENCH STRUCTURES WITH VOID-FREE POLYSILICON OR SILICON

  • US 20040180510A1
  • Filed: 03/12/2003
  • Published: 09/16/2004
  • Est. Priority Date: 03/12/2003
  • Status: Active Grant
First Claim
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1. A method of fabricating a semiconductor device, comprising:

  • forming a trench having sidewalls in a semiconductor substrate;

    depositing a liner over the sidewalls; and

    growing a filler within the trench from the liner.

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