Model pattern simulation of semiconductor wafer processing steps

• US 20040181768A1
• Filed: 03/12/2003
• Published: 09/16/2004
• Est. Priority Date: 03/12/2003
• Status: Abandoned Application

• Current Assignee: Accent Optical Technologies, Inc. (Onto Innovation Inc.)
• Original Assignee: Accent Optical Technologies, Inc. (Onto Innovation Inc.)
• Inventors: Krukar, Richard H.
• Application Number:
  US10/388,120
• Publication Number:
  US 20040181768A1
• Time in Patent Office: Days
• US Class Current: 716/19
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Abstract

Methods and computer program for determining a model pattern of a diffracting structure for use in semiconductor metrology, in which methods a series of process steps to be employed in fabrication of a diffracting structure, such as a diffracting structure fabricated on a semiconductor substrate employing a lithographic process, are specified, and each such specified process step is successively simulated to produce a model pattern of the diffracting structure. The methods further provides for generation of libraries of model patterns and simulated diffraction signatures based thereon, and optionally further provides for comparing diffraction signatures of measured diffracting structures to simulated diffraction signatures of members of the set of model patterns of the diffracting structure, selection of one or more close match simulated diffraction signatures, and deriving one or more parameters associated with the measured diffracting structures.

Claims

1. A method of specifying a model pattern of a diffracting structure for use in semiconductor metrology, the diffracting structure to be fabricated on a semiconductor substrate employing a lithographic process, the method comprising:

specifying a series of process steps to be employed in fabrication of a diffracting structure on a semiconductor substrate employing a lithographic process; and

simulating the series of process steps to produce a model pattern of the diffracting structure.

2. The method of claim 1, wherein specifying a series of process steps comprises selection of data in a database related to fabrication of the diffracting structure on a semiconductor substrate.

3. The method of claim 1, wherein specifying a series of process steps comprises specifying lithography patterns from lithography mask data.

4. The method of claim 1, wherein specifying a series of process steps comprises specifying a lithographic process step.

5. The method of claim 4, wherein specifying a series of process steps further comprises specifying at least one process step selected from the group consisting of oxidation, vapor deposition, spin-on deposition, etching, chemical mechanical polishing and strip process steps.

6. The method of claim 1, wherein specifying a series of process steps comprises entry of data in a computer-executable program and simulating the series of process steps comprises execution of the program.

7. A method of making a simulated diffraction signal of a diffracting structure fabricated on a semiconductor substrate, the method comprising:

specifying a series of process steps employed in fabrication of a diffracting structure on a semiconductor substrate;

simulating the series of process steps to produce a model pattern of the diffracting structure;

generating a simulated diffraction signal from the model pattern of the diffracting structure.

8. The method of claim 7, wherein specifying a series of process steps comprises selection of data in a database related to fabrication of the diffracting structure on a semiconductor substrate.

9. The method of claim 7, wherein specifying a series of process steps comprises specifying lithography patterns from lithography mask data.

10. The method of claim 7, wherein specifying a series of process steps comprises specifying a lithographic process step.

11. The method of claim 10, wherein specifying a series of process steps further comprises specifying at least one process step selected from the group consisting of oxidation, vapor deposition, spin-on deposition, etching, chemical mechanical polishing and strip process steps.

12. The method of claim 7, wherein specifying a series of process steps comprises entry of data in a computer-executable program, simulating the series of process steps comprises execution of a first module of the program and generating a simulated diffraction signal comprises execution of a second module of the program.

13. A method of making a library of simulated diffraction signals of a diffracting structure fabricated on a semiconductor substrate for use in semiconductor metrology, the method comprising:

specifying a series of process steps employed in fabrication of a diffracting structure on a semiconductor substrate and associated process variances for each process step;

simulating the series of process steps and associated process variances to produce a set of model patterns of the diffracting structure; and

generating simulated diffraction signals from members of the set of model patterns of the diffracting structure.

14. The method of claim 13 wherein specifying a series of process steps comprises specifying a lithographic process step and associated process variances for the lithographic process step.

15. The method of claim 14, wherein specifying a series of process steps further comprises specifying at least one process step selected from the group consisting of oxidation, vapor deposition, spin-on deposition, etching, chemical mechanical polishing and strip process steps.

16. A method of making a library of simulated diffraction signals of a diffracting structure fabricated on a semiconductor substrate for use in semiconductor metrology, the method comprising:

specifying a series of process steps employed in fabrication of a diffracting structure on a semiconductor substrate and one or more associated process variances for each process step;

simulating the series of process steps and one or more associated process variances to produce a set of model patterns of the diffracting structure;

generating simulated diffraction signatures of members of the set of model patterns of the diffracting structure;

obtaining a diffraction signature of the diffracting structure on a semiconductor substrate; and

comparing the diffraction signature of the diffracting structure to the simulated diffraction signatures of members of the set of model patterns of the diffracting structure.

17. The method of claim 16 further comprising the step of modifying parameters associated with a model pattern producing a close match simulated diffraction signal.

18. The method of claim 16 wherein obtaining a diffraction signature of the diffracting structure on a semiconductor substrate comprises use of a radiation source-based tool.

19. The method of claim 18, wherein the radiation source-based tool comprises a light source-based tool.

20. The method of claim 19, wherein the light source-based tool comprises an incident laser beam source, an optical system focusing the laser beam and scanning through some range of incident angles, and a detector for detecting the resulting diffraction signature over the resulting measurement angles.

21. The method of claim 20, wherein the light source-based tool comprises an angle-resolved scatterometer.

22. The method of claim 19, wherein the light source-based tool comprises a plurality of laser beam sources.

23. The method of claim 19, wherein the light source-based tool comprises an incident broad spectral light source, an optical system focusing the light and illuminating through some range of incident wavelengths, and a detector for detecting the resulting diffraction signature over the resulting measurement wavelengths.

24. The method of claim 19, wherein the light source-based tool comprises an incident light source, components for varying the amplitude and phase of the S and P polarizations, an optical system focusing the light and illuminating over some range of incident phases, and a detector for detecting the phase of the resulting diffraction signature.

25. The method of claim 16, wherein obtaining a diffraction signature of the diffracting structure on a semiconductor substrate comprises phase measurement by means of a broad spectral radiation source-based tool source, operating at a fixed angle, a variable angle Θ

or a variable angle φ

.

26. The method of claim 16, wherein obtaining a diffraction signature of the diffracting structure on a semiconductor substrate comprises phase measurement by means of a single wavelength radiation source-based tool source, operating at a fixed angle, a variable angle Θ

or a variable angle φ

.

27. The method of claim 16, wherein obtaining a diffraction signature of the diffracting structure on a semiconductor substrate comprises phase measurement by means of a multiple discrete wavelength radiation source-based tool source.

28. The method of claim 16, wherein obtaining a diffraction signature of the diffracting structure on a semiconductor substrate comprises obtaining a reflective diffraction signature.

29. The method of claim 16, wherein obtaining a diffraction signature of the diffracting structure on a semiconductor substrate comprises obtaining a transmissive diffraction signature.

30. The method of claim 16, wherein the diffraction signature of the diffracting structure is a specular order diffraction signature.

31. The method of claim 16, wherein the diffraction signature of the diffracting structure is a higher order diffraction signature.

32. The method of claim 16, wherein generating simulated diffraction signatures of members of the set of model patterns of the diffracting structure comprises submission to a remote computer on a computer network.

33. The method of claim 32, wherein results of the step are retrieved from or returned by the remote computer.

34. A method of inferentially measuring at least one parameter associated with a diffracting structure fabricated on a semiconductor substrate by means of a radiation-based tool, the method comprising:

specifying a series of two or more process steps employed in fabrication of a diffracting structure on a semiconductor substrate and one or more associated process variances for each process step;

simulating the series of process steps and associated process variances to produce a set of model patterns of the diffracting structure;

generating simulated diffraction signatures of members of the set of model patterns of the diffracting structure;

obtaining a diffraction signature of the diffracting structure on a semiconductor substrate by means of a radiation-based tool;

comparing the diffraction signature of the diffracting structure to the simulated diffraction signatures of members of the set of model patterns of the diffracting structure, and selecting a close match simulated diffraction signature; and

deriving at least one parameter associated with the diffracting structure by examination of the model pattern generating a close match simulated diffraction signature.

35. The method of claim 34 further comprising the step of modifying one or more parameters associated with a model pattern producing a close match simulated diffraction signature, and comparing the simulated diffraction signature thereof to the diffraction signature of the diffracting structure.

36. A computer program, residing on a computer-readable medium, comprising instructions for causing a computer to:

receive input on a series of process steps employed in fabrication of a diffracting structure on a semiconductor substrate;

determine one or more effects of each of the process steps in the fabrication of the diffracting structure; and

produce a graphic representation of a model pattern derived from the one or more effects of each of the process steps in the fabrication of the diffracting structure.

37. A graphic user interface method for a generating a graphic model pattern of a diffracting structure fabricated on a semiconductor substrate, the method comprising:

receiving inputs from a user to select process steps to be employed in modeling fabrication of a diffracting structure on a semiconductor substrate;

providing at least one input to specify an order in which to simulate the selected process steps;

displaying a graphic representation of a model pattern of the diffraction structure derived from one or more effects of each of the process steps in the fabrication of the diffracting structure.

38. The method of claim 37 further comprising employing a user interface to edit one or more process steps, such editing linked to display of the graphic representation of the model pattern of the diffraction structure derived from one or more effects of the edited one or more process steps.

39. The method of claim 37 wherein receiving inputs further comprises specifying values of one or more process parameters associated with selected process steps.

40. The method of claim 39 wherein values of one or more process parameters further comprise values of the variance of the process parameters.

41. The method of claim 37 further comprising the step of receiving inputs of process properties.

42. The method of claim 37 further comprising the step of receiving inputs of properties of materials employed in modeling fabrication of a diffracting structure on a semiconductor substrate.

43. The method of claim 37 further comprising displaying a graphic representation of a simulated diffraction signal generated from the model pattern of the diffracting structure.