Novel conductive elements for thin film transistors used in a flat panel display
First Claim
1. A thin film transistor, comprising a source electrode, a drain electrode, a gate electrode and a semiconductor layer, wherein one of the source electrode, the drain electrode, and the gate electrode comprises an aluminum alloy layer disposed between a pair of titanium layers.
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Abstract
A novel design for an electrode for a thin film transistor. The novel design allows for formation of a normal conductive channel between a source electrode and a drain electrode even after a heat treatment process, and a flat panel display including the thin film transistor. The thin film transistor includes a source electrode, a drain electrode, a gate electrode, and a semiconductor layer, wherein at least one of the source electrode, the drain electrode, and the gate electrode includes an aluminum alloy layer, and titanium layers are formed on both surfaces of the aluminum alloy layer. The electrodes are preferably absent any pure aluminum as pure aluminum can diffuse into the semiconductor layer causing a defect region and preventing a conductive channel from forming in the thin film transistor.
80 Citations
20 Claims
- 1. A thin film transistor, comprising a source electrode, a drain electrode, a gate electrode and a semiconductor layer, wherein one of the source electrode, the drain electrode, and the gate electrode comprises an aluminum alloy layer disposed between a pair of titanium layers.
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8. A flat panel display, comprising:
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a substrate;
a first plurality of thin film transistors formed on a surface of the substrate, the first plurality of thin film transistors comprising first source electrodes, first drain electrodes, first gate electrodes, and semiconductor layers;
a plurality of first conductive lines electrically connected to the first source electrodes; and
a plurality of second conductive lines electrically connected to the first gate electrodes;
a second plurality of thin film transistors, wherein the first drain electrodes of the first plurality of thin film transistors are electrically connected to gate electrodes of the second plurality of thin film transistors, wherein one of the first source electrodes, the first drain electrodes, the first gate electrodes, the plurality of first conductive lines, and the plurality of second conductive lines comprises an aluminum alloy layer and a titanium layer formed on one surface of the aluminum alloy layer. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A TFT, comprising:
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a source electrode, a gate electrode and a drain electrode; and
a semiconductor layer between the source electrode and the drain electrode, wherein one of said source electrode and said drain electrode contain an aluminum alloy layer and not a pure aluminum layer. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification