Semiconductor device, method of fabricating same, and, electrooptical device
First Claim
Patent Images
1. An electronic device comprising:
- a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes.
0 Assignments
0 Petitions
Accused Products
Abstract
A pair of substrates forming the active matrix liquid crystal display are fabricated from resinous substrates having transparency and flexibility. A thin-film transistor has a semiconductor film formed on a resinous layer formed on one resinous substrate. The resinous layer is formed to prevent generation of oligomers on the surface of the resinous substrate during formation of the film and to planarize the surface of the resinous substrate.
-
Citations
34 Claims
-
1. An electronic device comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes. - View Dependent Claims (12, 13, 14, 15, 16, 17)
-
-
2. An electronic device comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer, wherein an edge of the at least one of the source and the drain electrodes is aligned with an edge of the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes.
-
-
3. An electronic device comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes, and wherein a contact portion between the pixel electrode and the at least one of the source and the drain electrodes is not formed over the n-type semiconductor layer.
-
-
4. An electronic device comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer, and wherein the insulating film is in contact with an edge of the n-type semiconductor layer; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes.
-
-
5. An electronic device comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer, and wherein the insulating film is in contact with the gate insulating film; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes.
-
-
6. An electronic device comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer, wherein an edge of the at least one of the source and the drain electrodes is aligned with an edge of the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes, and wherein a contact portion between the pixel electrode and the at least one of the source and the drain electrodes is not formed over the n-type semiconductor layer.
-
-
7. An electronic device comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer, wherein an edge of the at least one of the source and the drain electrodes is aligned with an edge of the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer, and wherein the insulating film is in contact with an edge of the n-type semiconductor layer; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes.
-
-
8. An electronic device comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer, wherein an edge of the at least one of the source and the drain electrodes is aligned with an edge of the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer, and wherein the insulating film is in contact with the gate insulating film; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes.
-
-
9. An electronic device comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer, and wherein the insulating film is in contact with an edge of the n-type semiconductor layer; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes, and wherein a contact portion between the pixel electrode and the at least one of the source and the drain electrodes is not formed over the n-type semiconductor layer.
-
-
10. An electronic device comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer, and wherein the insulating film is in contact with the gate insulating film; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes, and wherein a contact portion between the pixel electrode and the at least one of the source and the drain electrodes is not formed over the n-type semiconductor layer.
-
-
11. An electronic device comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer, wherein the insulating film is in contact with an edge of the n-type semiconductor layer, and wherein the insulating film is in contact with the gate insulating film; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes.
-
-
18. A computer comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes. - View Dependent Claims (29, 30, 31, 32, 33, 34)
-
-
19. A computer comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer, wherein an edge of the at least one of the source and the drain electrodes is aligned with an edge of the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes.
-
-
20. A computer comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes, and wherein a contact portion between the pixel electrode and the at least one of the source and the drain electrodes is not formed over the n-type semiconductor layer.
-
-
21. A computer comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer, and wherein the insulating film is in contact with an edge of the n-type semiconductor layer; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes.
-
-
22. A computer comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer, and wherein the insulating film is in contact with the gate insulating film; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes.
-
-
23. A computer comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer, wherein an edge of the at least one of the source and the drain electrodes is aligned with an edge of the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes, and wherein a contact portion between the pixel electrode and the at least one of the source and the drain electrodes is not formed over the n-type semiconductor layer.
-
-
24. A computer comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer, wherein an edge of the at least one of the source and the drain electrodes is aligned with an edge of the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer, and wherein the insulating film is in contact with an edge of the n-type semiconductor layer; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes.
-
-
25. A computer comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer, wherein an edge of the at least one of the source and the drain electrodes is aligned with an edge of the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer, and wherein the insulating film is in contact with the gate insulating film; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes.
-
-
26. A computer comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer, and wherein the insulating film is in contact with an edge of the n-type semiconductor layer; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes, and wherein a contact portion between the pixel electrode and the at least one of the source and the drain electrodes is not formed over the n-type semiconductor layer.
-
-
27. A computer comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer, and wherein the insulating film is in contact with the gate insulating film; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes, and wherein a contact portion between the pixel electrode and the at least one of the source and the drain electrodes is not formed over the n-type semiconductor layer.
-
-
28. A computer comprising:
-
a panel having a thin film transistor formed over a substrate, the thin film transistor comprising;
a gate electrode formed over the substrate;
a gate insulating film formed over the gate electrode;
a substantially intrinsic semiconductor layer formed over the gate insulating film;
an n-type semiconductor layer formed over the substantially intrinsic semiconductor layer;
at least one of a source and a drain electrodes formed over the n-type semiconductor layer;
an insulating film comprising a resinous material formed over the thin film transistor, wherein the insulating film is not in contact with the substantially intrinsic semiconductor layer, wherein the insulating film is in contact with an edge of the n-type semiconductor layer, and wherein the insulating film is in contact with the gate insulating film; and
a pixel electrode formed over the insulating film, wherein the pixel electrode is in contact with the at least one of the source and the drain electrodes.
-
Specification