Vertical unipolar component
First Claim
1. A vertical unipolar component formed in a semiconductor substrate, said component comprising junctions formed at the surface of parts of said substrate separated with insulated trenches extending in an upper portion of the substrate, in which the insulated trenches are filled with a vertical multiple-layer of at least two conductive elements separated by an insulating layer, the multiple-layer depth being, at most, equal to the thickness of said upper portion.
2 Assignments
0 Petitions
Accused Products
Abstract
A vertical unipolar component formed in a semiconductor substrate. An upper portion of the substrate includes insulated trenches filled with a vertical multiple-layer of at least two conductive elements separated by an insulating layer, the multiple-layer depth being at most equal to the thickness of the upper portion.
6 Citations
7 Claims
- 1. A vertical unipolar component formed in a semiconductor substrate, said component comprising junctions formed at the surface of parts of said substrate separated with insulated trenches extending in an upper portion of the substrate, in which the insulated trenches are filled with a vertical multiple-layer of at least two conductive elements separated by an insulating layer, the multiple-layer depth being, at most, equal to the thickness of said upper portion.
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6. A method for manufacturing a vertical unipolar component in a semiconductor substrate, comprising:
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a) digging at least one vertical trench into an upper portion of the substrate;
b) coating the lateral walls and the bottom of the trench with an insulating layer;
c) depositing and etching a first conductive layer to partially fill the trench;
d) coating the remaining portion of the first conductive layer with an insulating layer; and
e) depositing and etching a second conductive layer to fill the trench. - View Dependent Claims (7)
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Specification