Laser diode with metal-oxide upper cladding layer
First Claim
1. A laser diode structure comprising:
- a quantum well region;
a waveguide layer formed over the quantum well region; and
a conductive metal-oxide cladding layer formed on the waveguide layer.
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Abstract
A nitride-based laser diode structure utilizing a metal-oxide (e.g., Indium-Tin-Oxide (ITO) or Zinc-Oxide (ZnO)) in place of p-doped AlGaN to form the upper cladding layer. An InGaN laser diode structure utilizes ITO upper cladding structure, with an SiO2 isolation structure formed on opposite sides of the ITO upper cladding structure to provide a lateral index step that is large enough to enable lateral single-mode operation. The lateral index step is further increased by slightly etching the GaN:Mg waveguide layer below the SiO2 isolation structure. An optional p-type current barrier layer (e.g., AlGaN:Mg having a thickness of approximately 20 nm) is formed between the InGaN-MQW region and a p-GaN upper waveguide layer to impede electron leakage from the InGaN-MQW region.
44 Citations
20 Claims
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1. A laser diode structure comprising:
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a quantum well region;
a waveguide layer formed over the quantum well region; and
a conductive metal-oxide cladding layer formed on the waveguide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for fabricating a laser diode structure comprising:
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forming a quantum well region;
forming a waveguide layer over the quantum well region; and
forming a conductive metal-oxide cladding layer on the waveguide layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification