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Methods of forming fluorine doped insulating materials

  • US 20040185183A1
  • Filed: 01/30/2004
  • Published: 09/23/2004
  • Est. Priority Date: 09/03/1998
  • Status: Active Grant
First Claim
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1. A method of forming an insulating material comprising:

  • providing a substrate within a reaction chamber;

    providing reactants comprising silicon, fluorine and ozone within the reaction chamber; and

    depositing an insulating material comprising fluorine, silicon and oxygen onto the substrate from the reactants.

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