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Method for fabricating a titanium nitride sensing membrane on an EGFET

  • US 20040185591A1
  • Filed: 03/17/2004
  • Published: 09/23/2004
  • Est. Priority Date: 03/19/2003
  • Status: Active Grant
First Claim
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1. A method for fabricating a titanium nitride (TiN) sensing membrane on an extended gate field effect transistor (EGFET), comprising the steps of:

  • depositing a layer of aluminum on a gate terminal of the EGFET using thermal evaporation, wherein the layer of aluminum extends from the gate terminal to a sensitive window of the EGFET; and

    forming the TiN sensing membrane on an exposed part of the layer of aluminum in the sensitive window as an ion sensitive sensor (pH sensor) using a radio frequency (RF) sputtering process during which TiN is used as a sputtering target and a mixture of argon and nitrogen in the ratio of 9;

    1 is used as a reactant.

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