Method for fabricating a titanium nitride sensing membrane on an EGFET
First Claim
1. A method for fabricating a titanium nitride (TiN) sensing membrane on an extended gate field effect transistor (EGFET), comprising the steps of:
- depositing a layer of aluminum on a gate terminal of the EGFET using thermal evaporation, wherein the layer of aluminum extends from the gate terminal to a sensitive window of the EGFET; and
forming the TiN sensing membrane on an exposed part of the layer of aluminum in the sensitive window as an ion sensitive sensor (pH sensor) using a radio frequency (RF) sputtering process during which TiN is used as a sputtering target and a mixture of argon and nitrogen in the ratio of 9;
1 is used as a reactant.
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Abstract
A method for fabricating a titanium nitride (TiN) sensing membrane on an extended gate field effect transistor (EGFET). The method comprises the steps of depositing a layer of aluminum on a gate terminal of the EGFET using thermal evaporation and forming the TiN sensing membrane on an exposed part of the layer of aluminum in the sensitive window as an ion sensitive sensor (pH sensor) using a radio frequency (RF) sputtering process. Because TiN is suitable for use in a standard CMOS process, all the elements in the sensing device can be mass produced and offer the benefits of low cost, high yield, and high performance.
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Citations
8 Claims
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1. A method for fabricating a titanium nitride (TiN) sensing membrane on an extended gate field effect transistor (EGFET), comprising the steps of:
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depositing a layer of aluminum on a gate terminal of the EGFET using thermal evaporation, wherein the layer of aluminum extends from the gate terminal to a sensitive window of the EGFET; and
forming the TiN sensing membrane on an exposed part of the layer of aluminum in the sensitive window as an ion sensitive sensor (pH sensor) using a radio frequency (RF) sputtering process during which TiN is used as a sputtering target and a mixture of argon and nitrogen in the ratio of 9;
1 is used as a reactant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification