Method of manufacturing semiconductor device, semiconductor manufacturing apparatus, and stencil mask

• US 20040185644A1
• Filed: 12/18/2003
• Published: 09/23/2004
• Est. Priority Date: 12/26/2002
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Shibata, Takeshi, Misawa, Hisanori
• Granted Patent: US 7,034,318 B2
• Time in Patent Office: Days
• US Class Current: 438/525
• CPC Class Codes: H01J 2237/31711 using mask
• CPC Class Codes: H01J 37/3171 for ion implantation

Abstract

A manufacturing apparatus of a semiconductor device is disclosed, which comprises an implantation source which applies particles or an electromagnetic wave into an implantation region of a semiconductor substrate in a θ direction shifted by an angle θ from a vertical direction of the semiconductor substrate, a first stencil mask disposed between the semiconductor substrate and the implantation source, the first stencil mask having a first opening corresponding in the θ direction to the implantation region, and a second stencil mask disposed between the first stencil mask and the implantation source, the second stencil mask having a second opening corresponding in the θ direction to the implantation region.

Claims

1. A manufacturing apparatus of a semiconductor device, comprising:

an implantation source which applies particles or an electromagnetic wave into an implantation region of a semiconductor substrate in a θ

direction shifted by an angle θ

(θ

≧

0)from a vertical direction of the semiconductor substrate;

a first stencil mask disposed between the semiconductor substrate and the implantation source, the first stencil mask having a first opening corresponding in the θ

direction to the implantation region; and

,

a second stencil mask disposed between the first stencil mask and the implantation source, the second stencil mask having a second opening corresponding in the θ

direction to the implantation region.

2. A manufacturing apparatus of a semiconductor device, according to claim 1, wherein the manufacturing apparatus further comprises a position adjusting device which relatively moves the first stencil and the second stencil to adjust positions of the first and second stencils.

3. A manufacturing apparatus of a semiconductor device, according to claim 2, wherein the position adjusting device includes an XYZθ

stage.

4. A manufacturing apparatus of a semiconductor device, comprising:

an implantation source which applies particles or an electromagnetic wave into an implantation region of a semiconductor substrate in a θ

direction shifted by an angle θ

from a vertical direction of the semiconductor substrate;

a first stencil mask disposed between the semiconductor substrate and the implantation source, the first stencil mask having a first opening corresponding in the θ

direction to the implantation region;

a second stencil mask disposed between the first stencil mask and the implantation source, the second stencil mask having a second opening corresponding in the θ

direction to the implantation region; and

a position adjusting device which relatively moves the first stencil and the second stencil to position the first stencil so that the first opening of the first stencil is set in a θ

direction shifted by an angle θ

from a vertical direction of the particle implantation region of the semiconductor substrate and position the second stencil so that the second opening of the second stencil is set in the θ

direction shifted by the angle θ

from the vertical direction of the particle implantation region of the semiconductor substrate.

5. A manufacturing apparatus of a semiconductor device, according to claim 4, wherein the first stencil has a thickness smaller than the second stencil.

6. A manufacturing apparatus of a semiconductor device, according to claim 4, wherein the first opening of the first stencil and the second opening of the second stencil have the same pattern.

7. A manufacturing apparatus of a semiconductor device in which particles generated by a particle generating device are implanted into an implantation region of a semiconductor substrate by way of a stencil mask structure having an opening for allowing the particles to pass therethrough, wherein

the stencil mask structure comprises a first stencil mask disposed between the semiconductor substrate and the particle generating device, the first stencil mask having a first opening corresponding to the particle implantation region, and a second stencil mask disposed between the first stencil mask and the particle generating device, the second stencil mask having a second opening corresponding to the implantation region.

8. A manufacturing apparatus of a semiconductor device, according to claim 7, wherein the manufacturing apparatus further comprises a position adjusting device which relatively moves the first stencil and the second stencil to adjust positions of the first and second stencils.

9. A manufacturing apparatus of a semiconductor device, according to claim 8, wherein the position adjusting device includes an XYZθ

stage.

10. A manufacturing apparatus of a semiconductor device in which particles generated by a particle generating device are implanted into an implantation region of a semiconductor substrate by way of a stencil mask structure having an opening for allowing the particles to pass therethrough, wherein

the stencil mask structure comprises a first stencil mask disposed between the semiconductor substrate and the particle generating device, the first stencil mask having a first opening corresponding to the particle implantation region, and a second stencil mask disposed between the first stencil mask and the particle generating device, the second stencil mask having a second opening corresponding to the implantation region;

and

the manufacturing apparatus further comprises a position adjusting device which relatively moves the first stencil and the second stencil to position the first stencil so that the first opening of the first stencil is set in a θ

direction shifted by an angle θ

from a vertical direction of the particle implantation region of the semiconductor substrate and position the second stencil so that the second opening of the second stencil is set in the θ

direction shifted by the angle θ

from the vertical direction of the particle implantation region of the semiconductor substrate.

11. A manufacturing apparatus of a semiconductor device, according to claim 10, wherein the first stencil has a thickness smaller than the second stencil.

12. A manufacturing apparatus of a semiconductor device, according to claim 10, wherein the first opening of the first stencil and the second opening of the second stencil have the same pattern.

13. A method of manufacturing a semiconductor device, comprising:

generating particles to be implanted into a semiconductor substrate;

causing the particles to pass through a second opening of a second stencil mask having the second opening formed therein;

causing the particles having passed through the second opening to pass a first opening of a first stencil mask having the first opening formed therein; and

applying the particles having passed through the first opening of the first stencil into an implantation region of the semiconductor substrate.

14. A method of manufacturing a semiconductor device, according to claim 13, wherein the particles are implanted into the implantation region of the semiconductor substrate in a θ

direction (θ

≧

0) sifted by an angle θ

from a vertical direction of the implantation region of the semiconductor substrate.

15. A method of manufacturing a semiconductor device, according to claim 13, wherein the implantation region of the semiconductor substrate is smaller than the first opening of the first stencil and the second opening of the second stencil.

16. A method of manufacturing a semiconductor device, comprising:

generating particles to be implanted into a semiconductor substrate;

causing the particles to pass through a second opening of a second stencil mask having the second opening formed therein;

causing the particles having passed through the second opening to pass a first opening of a first stencil mask having the first opening formed therein; and

applying the particles having passed through the first opening of the first stencil into an implantation region of the semiconductor substrate, and

wherein the first opening of the first stencil has a rectangle shape having a first width in a first direction, and the second opening of the second stencil has a rectangle shape having a second width in a second direction orthogonal to the first direction, and

the implantation region has a square having one side of a length corresponding to the first width of the rectangle shape of the first opening and another side of a length adjacent to the first side corresponding to the second width of the rectangle shape of the second opening.

17. A stencil mask comprising:

a first transfer mask;

a second transfer mask spaced from one side of the first transfer mask by a predetermined distance; and

a fixing device which fixes the first transfer mask and the second transfer mask.