Reforming wet-tantalum capacitors in implantable medical devices

• US 20040186520A1
• Filed: 03/16/2004
• Published: 09/23/2004
• Est. Priority Date: 12/01/1999
• Status: Active Grant

• Current Assignee: Greatbatch Limited (Greatbatch Incorporated)
• Original Assignee: Cardiac Pacemakers Incorporated (Boston Scientific Corporation)
• Inventors: Paris, Michael W., Linder, William J., Balczewski, Ron A., Harguth, Robert S., Munson, Gregory S.
• Granted Patent: US 7,131,988 B2
• Time in Patent Office: Days
• US Class Current: 607/5
• CPC Class Codes: A61N 1/3956 Implantable devices for applying electric shocks to the heart, e.g. for cardioversion
• CPC Class Codes: H01G 9/042 characterised by the material H01G11/22 takes precedence

Abstract

Miniature defibrillators and cardioverters detect abnormal heart rhythms and automatically apply electrical therapy to restore normal heart function. Critical to this function, aluminum-electrolytic capacitors store and deliver life-saving bursts of electric charge to the heart. This type of capacitor requires regular “reform” to preserve its charging efficiency over time. Because reform expends valuable battery energy, manufacturers developed wet-tantalum capacitors, which are generally understood not to require reform. Yet, the present inventors discovered through extensive study that wet-tantalum capacitors exhibit progressively worse charging efficiency over time. Accordingly, to address this problem, the inventors devised unique reform techniques for wet-tantalum capacitors. One exemplary technique entails charging wet-tantalum capacitors to a voltage equal to about 90% of their rated voltage and allowing the charge to dissipate through system leakage for a period of time, before discharging through a non-therapeutic load.

Claims

1. A capacitor-reform method comprising:

charging at least one wet-tantalum capacitor in an implantable medical device;

allowing the one wet-tantalum capacitors to discharge through system leakage after charging the one wet-tantalum capacitor in the implantable medical device; and

discharging the one or more of the wet-tantalum capacitors through a non-therapeutic load, after allowing the one or more wet-tantalum capacitors to discharge through system leakage.

2. The method of claim 1, wherein the implantable medical device has a housing and the non-therapeutic load is a resistor within the housing.

3. The method of claim 1, wherein the one wet-tantalum capacitor comprises a tantalum anode and a non-tantalum cathode.

4. The method of claim 1, wherein the implantable device includes means for defibrillation, means for cardioversion, or means for pacemaking.

5. A capacitor-reform method comprising:

charging at least one wet-tantalum capacitor to a high voltage relative its rated voltage or maximum-energy voltage;

partially discharging the one the wet-tantalum capacitors through system leakage after charging the one wet-tantalum capacitor to the high voltage; and

discharging the one or more of the wet-tantalum capacitors through a non-therapeutic load, after partially discharging the one or more wet-tantalum capacitors through system leakage.

6. The method of claim 5, wherein the high voltage is about 90 percent of the rated voltage or a maximum-energy voltage for the capacitor.

7. The method of claim 5, wherein the implantable medical device has a housing and the non-therapeutic load is a resistor within the housing.

8. The method of claim 5, wherein the one wet-tantalum capacitor comprises a tantalum anode and a non-tantalum cathode.

9. The method of claim 5, wherein the partial discharging is initiated after a time period of at least 60 seconds.

10. The method of claim 5, wherein the implantable device includes means for defibrillation, means for cardioversion, or means for pacemaking.

11. A capacitor-reform method comprising:

charging at least one wet-tantalum capacitor in an implantable medical device, in response to a reform signal from a processor in the medical device;

allowing the one wet-tantalum capacitors to discharge through system leakage after charging the one wet-tantalum capacitor in the implantable medical device; and

discharging the one or more of the wet-tantalum capacitors through a non-therapeutic load, after allowing the one or more wet-tantalum capacitors to discharge through system leakage.

12. The method of claim 11, wherein the implantable medical device has a housing and the non-therapeutic load is a resistor within the housing.

13. The method of claim 11, wherein the one wet-tantalum capacitor comprises a tantalum anode and a non-tantalum cathode.

14. The method of claim 11, wherein the implantable device includes means for defibrillation, means for cardioversion, or means for pacemaking.

15. A capacitor-reform method comprising:

charging at least one wet-tantalum capacitor in a device to a voltage;

allowing the one wet-tantalum capacitors to discharge through system leakage after charging the one wet-tantalum capacitor in the device; and

discharging the one or more of the wet-tantalum capacitors through a load, after allowing the one or more wet-tantalum capacitors to discharge through system leakage.

16. The method of claim 15, wherein the device has a housing and the load is a resistor within the housing.

17. The method of claim 15, wherein the one wet-tantalum capacitor comprises a tantalum anode and a non-tantalum cathode.

18. The method of claim 15, wherein the device is implantable and includes a housing and at least one of means for defibrillation, means for cardioversion, and means for pacemaking;

and wherein the load includes a resistor within the housing.