Process and device for producing a layer of tantalum pentoxide on a carrier material, in particular titanium nitride, and integrated circuit incorporating a layer of tantalum pentoxide
First Claim
Patent Images
1. A process for formation of a layer of tantalum pentoxide (Ta2O5) on a carrier material, comprising:
- heating carrier material to a heating temperature of between approximately 200°
C. and 400°
C.; and
circulating a gas mixture comprising tert-butyliminotris (diethylamino) tantalum (t-BuN═
Ta(NEt2)3) in contact with the heated carrier material under an oxidizing atmosphere thereby forming a layer of tantalum pentoxide (Ta2O5) on the carrier material, the partial pressure of the tert-butyliminotris (diethylamino) tantalum being greater than or equal to 25 mTorr.
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Abstract
Carrier material (PL) is heated (MCH) to a heating temperature of between 200° C. and 400° C. and a gas mixture (MG) including tert-butyliminotris (diethylamino) tantalum (t-BuN=Ta(NEt2)3) is circulated in contact with the heated carrier material under an oxidizing atmosphere thereby forming a layer of tantalum pentoxide (Ta2O5) on the carrier material. The partial pressure of the tert-butyliminotris (diethylamino) tantalum is preferably greater than or equal to 25 mTorr.
29 Citations
39 Claims
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1. A process for formation of a layer of tantalum pentoxide (Ta2O5) on a carrier material, comprising:
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heating carrier material to a heating temperature of between approximately 200°
C. and 400°
C.; and
circulating a gas mixture comprising tert-butyliminotris (diethylamino) tantalum (t-BuN═
Ta(NEt2)3) in contact with the heated carrier material under an oxidizing atmosphere thereby forming a layer of tantalum pentoxide (Ta2O5) on the carrier material, the partial pressure of the tert-butyliminotris (diethylamino) tantalum being greater than or equal to 25 mTorr. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A device for the formation of a layer of tantalum pentoxide (Ta2O5) on a carrier material, comprising:
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heating means for heating carrier material;
injection means for circulating a gas mixture in contact with the heated carrier material thereby forming a layer of tantalum pentoxide (Ta2O5) on the carrier material, wherein the heating means is for heating the carrier material to a heating temperature of between approximately 200°
C. and 400°
C., and in that the gas mixture comprises tert-butyliminotris (diethylamino) tantalum (t-BuN═
Ta(NEt2)3) under an oxidizing atmosphere, the partial pressure of the tert-butyliminotris (diethylamino) tantalum being greater than or equal to 25 mTorr. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. An integrated circuit, comprising:
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at least one capacitor comprising tantalum pentoxide positioned between two electrodes, the at least one capacitor being obtained by a process comprising;
heating carrier material to a heating temperature of between approximately 200°
C. and 400°
C.; and
circulating a gas mixture comprising tert-butyliminotris (diethylamino) tantalum (t-BuN═
Ta(NEt2)3) in contact with the heated carrier material under an oxidizing atmosphere thereby forming a layer of tantalum pentoxide on the carrier material, the partial pressure of the tert-butyliminotris (diethylamino) tantalum being greater than or equal to 25 mtorr. - View Dependent Claims (34, 35, 36, 37, 38, 39)
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Specification