Solar cell and method for production thereof
First Claim
Patent Images
1. Solar cell (10) including a semiconductor substrate (16) with first and second contacts (26, 28;
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58, 60;
80, 82;
106, 108;
132) for collecting and discharging minority and majority charge carriers generated by incident radiation energy in the semiconductor substrate, whereby at least the back surface of the semiconductor substrate has line or bar-like elevations (18, 50, 52, 54, 56, 78, 104, 130, 140) with respectively first and second longitudinal flanks (20, 22, 62, 74, 76, 110, 112) running parallel, whereby the first and second contacts are arranged on the back surface of the semiconductor substrate spaced from one another, wherein the first and second longitudinal flank (20, 22, 62, 64, 74, 76, 110, 112) of the elevation (18, 50, 52, 54, 56, 78, 104, 130, 140) pass over into one another through an outer segment (24, 72, 86, 114) running parallel or approximately parallel to the plane spanned by the semiconductor substrate (16), wherein on at least some of the elevations, the first contacts (26, 58, 80, 106) extend on the first longitudinal flanks (22, 62, 74, 110) of the elevations and the second contacts (28, 60, 82, 108) on the second longitudinal flanks (20, 64, 76, 112) of the elevations, and wherein the first and second contacts are spaced from one another on the trench side as well as on the exterior segment side.
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Abstract
The invention relates to a method for production of a solar cell (10) and said cell. According to the invention, a high efficiency may be achieved, whereby, on the rear side of the solar cell, first and second contacts (26, 28) are arranged on projections (18), or the flanks thereof (20, 22), for collecting minority and majority charge carriers.
75 Citations
45 Claims
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1. Solar cell (10) including a semiconductor substrate (16) with first and second contacts (26, 28;
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58, 60;
80, 82;
106, 108;
132) for collecting and discharging minority and majority charge carriers generated by incident radiation energy in the semiconductor substrate, whereby at least the back surface of the semiconductor substrate has line or bar-like elevations (18, 50, 52, 54, 56, 78, 104, 130, 140) with respectively first and second longitudinal flanks (20, 22, 62, 74, 76, 110, 112) running parallel, whereby the first and second contacts are arranged on the back surface of the semiconductor substrate spaced from one another, wherein the first and second longitudinal flank (20, 22, 62, 64, 74, 76, 110, 112) of the elevation (18, 50, 52, 54, 56, 78, 104, 130, 140) pass over into one another through an outer segment (24, 72, 86, 114) running parallel or approximately parallel to the plane spanned by the semiconductor substrate (16), wherein on at least some of the elevations, the first contacts (26, 58, 80, 106) extend on the first longitudinal flanks (22, 62, 74, 110) of the elevations and the second contacts (28, 60, 82, 108) on the second longitudinal flanks (20, 64, 76, 112) of the elevations, and wherein the first and second contacts are spaced from one another on the trench side as well as on the exterior segment side. - View Dependent Claims (2, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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58, 60;
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3. Solar cell according to claim I or 2, wherein the semiconductor substrate (16) is highly doped by, for example, diffusion, ion implantation or alloying and/or is inverted and/or has a hetero-transition at least in its surface running under the first and/or the second contact (26, 28;
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58, 60;
80, 82;
106, 108;
132).
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58, 60;
Specification