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Ionized PVD with sequential deposition and etching

  • US 20040188239A1
  • Filed: 03/05/2004
  • Published: 09/30/2004
  • Est. Priority Date: 05/04/2001
  • Status: Active Grant
First Claim
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1. An ionized physical deposition process comprising:

  • sealing a substrate within a chamber of a processing apparatus, and performing an ionized physical vapor deposition process to deposit a conductive layer on surfaces of high aspect ratio submicron features on the substrate by operating the apparatus, without opening the chamber, in a deposition mode, followed by an etch mode, the modes being affected by controlling the apparatus to operate with static magnetic field parameters that are different during deposition modes than during etch modes.

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